Resistance switching memory in perovskite oxides

2015 ◽  
Vol 358 ◽  
pp. 206-224 ◽  
Author(s):  
Z.B. Yan ◽  
J.-M. Liu
Keyword(s):  
Perovskite Oxides ◽  
Resistance Switching ◽  
Switching Memory

Resistance switching memory devices constructed on plastic with solution-processed titanium oxide

2009 ◽  
Vol 19 (14) ◽  
pp. 2082 ◽  
Author(s):  
Junggwon Yun ◽  
Kyoungah Cho ◽  
Byoungjun Park ◽  
Bae Ho Park ◽  
Sangsig Kim
Keyword(s):  
Titanium Oxide ◽  
Resistance Switching ◽  
Memory Devices ◽  
Solution Processed ◽  
Switching Memory

Characteristics and mechanism of nano-polycrystalline La2O3thin-film resistance switching memory

2013 ◽  
Vol 7 (11) ◽  
pp. 1005-1008 ◽  
Author(s):  
Hongbin Zhao ◽  
Hailing Tu ◽  
Feng Wei ◽  
Yuhua Xiong ◽  
Xinqaing Zhang ◽  
...  
Keyword(s):  
Resistance Switching ◽  
Film Resistance ◽  
Switching Memory

Research of Bilayer Stacked Resistance Switching Memory Structure Based on Pt/NiO/TiO2/Pt

2019 ◽  
Vol 44 (1) ◽  
pp. 1221-1226
Author(s):  
E. Rite ◽  
Kailiang Zhang ◽  
Fang Wang ◽  
Xiaoying Wei ◽  
Kai Liu ◽  
...  
Keyword(s):  
Resistance Switching ◽  
Memory Structure ◽  
Switching Memory

scholarly journals CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

Nano Letters ◽  
2008 ◽  
Vol 8 (2) ◽  
pp. 392-397 ◽  
Author(s):  
Sung Hyun Jo ◽  
Wei Lu
Keyword(s):  
Resistance Switching ◽  
Cmos Compatible ◽  
Switching Memory

Self-rectifying resistance switching memory based on a dynamic p–n junction

2020 ◽  
Vol 32 (8) ◽  
pp. 085203
Author(s):  
Changjin Wu ◽  
Xiaoli Li ◽  
Xiaohong Xu ◽  
Bo Wha Lee ◽  
Seung Chul Chae ◽  
...  
Keyword(s):  
Resistance Switching ◽  
Switching Memory

Atomic Layer Deposited Oxygen‐Deficient TaOxLayers for Electroforming‐Free and Reliable Resistance Switching Memory

2018 ◽  
Vol 12 (12) ◽  
pp. 1800429 ◽  
Author(s):  
Dmitry S. Kuzmichev ◽  
Yuri Y. Lebedinskii ◽  
Cheol Seong Hwang ◽  
Andrey M. Markeev
Keyword(s):  
Atomic Layer ◽  
Resistance Switching ◽  
Switching Memory

Write once read many times resistance switching memory based on all-inorganic perovskite CsPbBr3 quantum dot

2019 ◽  
Vol 90 ◽  
pp. 123-126 ◽  
Author(s):  
Zhiliang Chen ◽  
Yating Zhang ◽  
Yu Yu ◽  
Yongli Che ◽  
Lufan Jin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Resistance Switching ◽  
Inorganic Perovskite ◽  
Switching Memory
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