Gate All around with Back Gate NAND Flash Structure for Excellent Reliability Characteristics in Program Operation

A gate all around with back-gate (GAAB) structure was proposed for 3D NAND Flash memory technology. We demonstrated the excellent characteristics of the GAAB NAND structure, especially in the self-boosting operation. Channel potential of GAAB shows a gradual slope compared with a conventional GAA NAND structure, which leads to excellent reliability characteristics in program disturbance, pass disturbance and oxide break down issue. As a result, the GAAB structure is expected to be appropriate for a high stacking structure of future memory structure.

Proposal of an estimator of the Hurst parameter for a self-similar process representative of the degree of randomness of the recorded traffic in IEEE 802.3-2005 networks

An hypothesis for the existence of a process with long term memory structure, that represents the independence between the degree of randomness of the traffic generated by the sources and the pattern of traffic stream exhibited by the network is presented, discussed and developed. This methodology is offered as a new and alternative way of approaching the estimation of performance and the design of computer networks ruled by the standard IEEE 802.3-2005.

Proposición de un estimador del parámetro de Hurst para un proceso autosimilar representativo del grado de aleatoriedad del tráfico registrado en redes IEEE 802.3-2005

An hypothesis for the existence of a process with long term memory structure, that represents the independence between the degree of randomness of the traffic generated by the sources and the pattern of traffic stream exhibited by the network is presented, discussed and developed. This methodology is offered as a new and alternative way of approaching the estimation of performance and the design of computer networks ruled by the standard IEEE 802.3-2005.