Growth and Auger electron spectroscopy characterization of donut-shaped ZnO nanostructures

2007 ◽  
Vol 253 (17) ◽  
pp. 7162-7165 ◽  
Author(s):  
Liang-Chiun Chao ◽  
Shih-Hsuan Yang
2015 ◽  
Vol 821-823 ◽  
pp. 648-651
Author(s):  
Anatoly M. Strel'chuk ◽  
Eugene B. Yakimov ◽  
Alexander A. Lavrent’ev ◽  
Evgenia V. Kalinina ◽  
Alexander A. Lebedev

4H-SiC p+nn+ structures fabricated by implantation of Al into a commercial n-type 4H-SiC epitaxial layer doped to (3-5)Ÿ1015cm-3 have been studied. Structures with unstable excess forward current were characterized by electron beam induced current (EBIC) and secondary electron (SE) methods and by Auger-electron spectroscopy (AES). Numerous defects were found with a depth which exceed the thickness of the p+-layer. Also, it was demonstrated that the concentration of carbon on the SiC surface always exceeds that of silicon, which may be the reason for the initially unstable conductivity via the defects.


2007 ◽  
Vol 253 (8) ◽  
pp. 3977-3981 ◽  
Author(s):  
Milan Bizjak ◽  
Anton Zalar ◽  
Peter Panjan ◽  
Benjamin Zorko ◽  
Borut Praček

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