Characterization of 4H-SiC pn Structures with Unstable Excess Current
2015 ◽
Vol 821-823
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pp. 648-651
Keyword(s):
4H-SiC p+nn+ structures fabricated by implantation of Al into a commercial n-type 4H-SiC epitaxial layer doped to (3-5)1015cm-3 have been studied. Structures with unstable excess forward current were characterized by electron beam induced current (EBIC) and secondary electron (SE) methods and by Auger-electron spectroscopy (AES). Numerous defects were found with a depth which exceed the thickness of the p+-layer. Also, it was demonstrated that the concentration of carbon on the SiC surface always exceeds that of silicon, which may be the reason for the initially unstable conductivity via the defects.
2019 ◽
Vol 7
(3)
◽
pp. 100-103
2017 ◽
Vol 11
(1)
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pp. 1770303
2007 ◽
Vol 253
(17)
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pp. 7162-7165
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Keyword(s):
1974 ◽
Vol 45
(5)
◽
pp. 707-708
◽
Keyword(s):
Keyword(s):
Keyword(s):
2004 ◽
Vol 87
(6)
◽
pp. 1153-1156
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