In situ study on the electronic structure of graphene grown on 6H–SiC <mml:math altimg="si1.gif" overflow="scroll" xmlns:xocs="http://www.elsevier.com/xml/xocs/dtd" xmlns:xs="http://www.w3.org/2001/XMLSchema" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://www.elsevier.com/xml/ja/dtd" xmlns:ja="http://www.elsevier.com/xml/ja/dtd" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:tb="http://www.elsevier.com/xml/common/table/dtd" xmlns:sb="http://www.elsevier.com/xml/common/struct-bib/dtd" xmlns:ce="http://www.elsevier.com/xml/common/dtd" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:cals="http://www.elsevier.com/xml/common/cals/dtd"><mml:mrow><mml:mo stretchy="false">(</mml:mo><mml:mn>0</mml:mn><mml:mtext> </mml:mtext><mml:mn>0</mml:mn><mml:mtext> </mml:mtext><mml:mn>0</mml:mn><mml:mtext> </mml:mtext><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mo stretchy="false">)</mml:mo></mml:mrow></mml:math> with synchrotron radiation photoelectron spectroscopy

The results of experimental studies of the electronic and photoemission properties of an epitaxial GaN layer grown on a SiC/Si(111) substrate by plasma assisted molecular beam epitaxy are presented. The electronic structure of the GaN surface and ultrathin Li/GaN interface was first studied in situ under ultrahigh vacuum conditions under different Li coverages. The experiments were performed using photoelectron spectroscopy with synchrotron radiation in the photon energy range of 75–850 eV. The photoemission spectra in the region of the valence band and surface states and the photoemission spectra from the N 1s, Ga 3d, Li 2s core levels were studied for different submonolayer Li coverages. It is established that Li adsorption causes significant changes in the general form of the spectra induced by charge transfer between the Li layer and the lower N and Ga layers. It is established that the GaN surface has predominantly N-polarity. The semiconductor character of the Li / GaN interface is shown.

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Электронная структура термически окисленного вольфрама

Физика твердого тела ◽

10.21883/ftt.2021.08.51173.065 ◽

2021 ◽

Vol 63 (8) ◽

pp. 1166

Author(s):

П.А. Дементьев ◽

Е.В. Дементьева ◽

М.Н. Лапушкин ◽

Д.А. Смирнов ◽

С.Н. Тимошнев

Keyword(s):

Electronic Structure ◽

Energy Range ◽

Tungsten Oxide ◽

Oxidation State ◽

Photoelectron Spectroscopy ◽

Semiconductor Film ◽

Clean Surface ◽

Tungsten Oxides ◽

In Situ Study

Using the method of photoelectron spectroscopy, an in situ study in ultrahigh vacuum of the electronic structure of a clean surface of tungsten oxidized at an oxygen pressure of 1 Torr and temperature of 1000 K was carried out. The spectra of photoemission from the valence band and core levels O 1s, O 2s, W 4f under synchrotron excitation in the photon energy range 80  600 eV are studied. It was found that a semiconductor film of tungsten oxide is formed, which contains various tungsten oxides with an oxidation state of 6+ to 4+. On the surface, mainly tungsten oxides with an oxidation state of 6+ are formed, the proportion of which gradually decreases with distance from the surface with an increase in tungsten oxides with an oxidation state of 4+.

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The initial atomic layer deposition of HfO2∕Si(001) as followed in situ by synchrotron radiation photoelectron spectroscopy

Journal of Applied Physics ◽

10.1063/1.2978362 ◽

2008 ◽

Vol 104 (6) ◽

pp. 064116 ◽

Cited By ~ 26

Author(s):

Massimo Tallarida ◽

Konstantin Karavaev ◽

Dieter Schmeisser

Keyword(s):

Synchrotron Radiation ◽

Atomic Layer Deposition ◽

Photoelectron Spectroscopy ◽

Atomic Layer ◽

Layer Deposition

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Characterisation of the electronic structure of some stable nitroxyl radicals using variable energy photoelectron spectroscopy

Physical Chemistry Chemical Physics ◽

10.1039/c4cp00867g ◽

2014 ◽

Vol 16 (22) ◽

pp. 10734-10742 ◽

Cited By ~ 17

Author(s):

Branka Kovač ◽

Ivan Ljubić ◽

Antti Kivimäki ◽

Marcello Coreno ◽

Igor Novak

Keyword(s):

Electronic Structure ◽

Synchrotron Radiation ◽

Photoelectron Spectroscopy ◽

Nitroxyl Radicals ◽

Intramolecular Interactions ◽

Stable Nitroxyl Radicals ◽

Amide Derivatives ◽

Variable Energy

Core and valence ionizations of three stable nitroxyl radicals studied using synchrotron radiation reveal strong intramolecular interactions in amide derivatives.

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