Hot-filament chemical vapor deposition of amorphous carbon film on diamond grits and induction brazing of the diamond grits

2012 ◽  
Vol 258 (10) ◽  
pp. 4750-4755 ◽  
Author(s):  
Bojiang Ma ◽  
Qingxian Yu
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Amorphous Carbon Film ◽  
Induction Brazing ◽  
Hot Filament

Microstructure of Carbon Film Deposited Using Hot-Filament Chemical Vapor Deposition

2015 ◽  
Vol 48 (6) ◽  
pp. 104-109
Author(s):  
Youn-Joon Baik ◽  
Do-Hyun Kwon ◽  
Jong-Keuk Park ◽  
Wook-Seong Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Hot Filament

Effect of hydrogenated amorphous carbon films on nucleation of diamond particles by hot-filament chemical vapor deposition

1995 ◽  
Vol 10 (2) ◽  
pp. 431-435 ◽  
Author(s):  
Kazunori Tamaki ◽  
Yoshikazu Nakamura ◽  
Yoshihisa Watanabe ◽  
Shigekazu Hirayama
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bonding State ◽  
Diamond Particles ◽  
Intermediate Layers ◽  
Hot Filament ◽  
Hydrogenated Amorphous

To enhance a nucleation rate of diamond particles, hydrogenated amorphous carbon (a-C: H) intermediate layers have been formed by radio frequency plasma chemical vapor deposition (CVD) on silicon substrates prior to diamond deposition by hot filament CVD, and the effect of a-C: H intermediate layers on the nucleation and growth rate of diamond particles is studied by varying the thickness of a-C: H films. It is found that diamond particles are well synthesized on thin a-C: H intermediate layers and the nucleation density and growth rate are decreased with increasing the thickness of a-C: H films. Atomic force microscope observations show that a-C: H intermediate layers with rough surface are more effective than the smooth surface for diamond synthesis. Raman spectroscopy shows that the bonding state of carbon atoms in a-C: H films does not change by varying the thickness of a-C: H films. It is proposed that diamond nucleation is affected by the surface morphology rather than the bonding state of carbon atoms in a-C: H films.

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