Growth of epitaxial strontium titanate films on germanium substrates using pulsed laser deposition

2021 ◽  
Vol 542 ◽  
pp. 148601
Author(s):  
M.A. Khan ◽  
L. Braic ◽  
Y. AlSalik ◽  
H. Idriss
1998 ◽  
Vol 72 (23) ◽  
pp. 3065-3067 ◽  
Author(s):  
Arnold Leitner ◽  
Charles T. Rogers ◽  
John C. Price ◽  
David A. Rudman ◽  
David R. Herman

2007 ◽  
Vol 89 (4) ◽  
pp. 933-940 ◽  
Author(s):  
I. Marozau ◽  
M. Döbeli ◽  
T. Lippert ◽  
D. Logvinovich ◽  
M. Mallepell ◽  
...  

2000 ◽  
Vol 617 ◽  
Author(s):  
V. Craciun ◽  
J. M. Howard ◽  
E. S. Lambers ◽  
R. K. Singh

AbstractBarium strontium titanate (BST) thin films were grown directly on Si substrates by an in situ ultraviolet (UV)-assisted pulsed laser deposition (UVPLD) technique. With respect to films grown by conventional (i.e. without UV illumination) pulsed laser deposition (PLD), the UVPLD grown films exhibited improved structural and electrical properties. The dielectric constant of a 40-nm thick film deposited at 650 °C was determined to be 281, the leakage current density was approximately 4×10−8 A/cm2at 100 kV/cm, and the density of interface states at the flat-band voltage was found to be approximately 5.6×1011 eV−1 cm−2 X-ray photoelectron spectroscopy investigations found that the surface of the grown films exhibited an additional Ba-containing phase, besides the usual BST perovskite phase, which was likely caused by stress and/or oxygen vacancies. The amount of this new phase was always smaller and very superficial for UVPLD grown films, which can explain their better overall properties.


Materials ◽  
2009 ◽  
Vol 2 (3) ◽  
pp. 1388-1401 ◽  
Author(s):  
Ivan Marozau ◽  
Andrey Shkabko ◽  
Max Döbeli ◽  
Thomas Lippert ◽  
Dimitri Logvinovich ◽  
...  

2006 ◽  
Vol 515 (4) ◽  
pp. 1788-1795 ◽  
Author(s):  
Y.Y. Tse ◽  
Y. Koutsonas ◽  
T.J. Jackson ◽  
G. Passerieux ◽  
I.P. Jones

2000 ◽  
Vol 656 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
J. D. Demaree ◽  
Steven H. Mcknight

ABSTRACTBarium strontium titanate (BSTO) films were synthesized by the pulsed laser deposition technique (PLD) on silicon substrates at room temperature. The thin films were synthesized at ambient temperature and 30 mT oxygen partial pressure, with 300, 400 and 500 mJ/cm2 laser fluence at 5, 10 and 20 pulses per second on silicon wafer substrates. All films were subsequently post-annealed at 750°C in a continuous oxygen stream. The microstructure, crystallinity and lattice constant of the BSTO films were studied with the aid of atomic force microscopy (FEM) and Glancing Angle X-ray Diffraction analysis (GAXRD). The hardness and modulus of elasticity of the films were studied with the aid of a nanohardness indenter. The film stoichiometry was determined with the aid of Rutherford Backscattering Spectrometry (RBS). The results of this research will be combined with the results of our previous work [1, 2] on the effect of substrate temperature and oxygen partial pressure on the microstructure and properties of the BSTO films in order to construct a structural zone model (SZM) of the BSTO films synthesized by PLD.


2000 ◽  
Vol 655 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
J. D. Demaree ◽  
Steven H. McKnight

AbstractBarium strontium titanate (BSTO) films were synthesized by the pulsed laser deposition technique (PLD) on silicon substrates at room temperature. The thin films were synthesized at ambient temperature and 30 mT oxygen partial pressure, with 300, 400 and 500 mJ/cm2 laser fluence at 5, 10 and 20 pulses per second on silicon wafer substrates. All films were subsequently post-annealed at 750°C in an continuous oxygen stream. The microstructure, crystallinity and lattice constant of the BSTO films were studied with the aid of atomic force microscopy (FEM) and Glancing Angle X-ray Diffraction analysis (GAXRD). The hardness and modulus of elasticity of the films were studied with the aid of a nanohardness indenter. The film stoichiometry was determined with the aid of Rutherford Backscattering Spectrometry (RBS). The results of this research will be combined with the results of our previous work [1, 2] on the effect of substrate temperature and oxygen partial pressure on the microstructure and properties of the BSTO films in order to construct a structural zone model (SZM) of the BSTO films synthesized by PLD.


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