scholarly journals One-step preparation of N-doped strontium titanate films by pulsed laser deposition

2007 ◽  
Vol 89 (4) ◽  
pp. 933-940 ◽  
Author(s):  
I. Marozau ◽  
M. Döbeli ◽  
T. Lippert ◽  
D. Logvinovich ◽  
M. Mallepell ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
One Step

Pulsed laser deposition of superconducting Nb-doped strontium titanate thin films

1998 ◽  
Vol 72 (23) ◽  
pp. 3065-3067 ◽  
Author(s):  
Arnold Leitner ◽  
Charles T. Rogers ◽  
John C. Price ◽  
David A. Rudman ◽  
David R. Herman
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition

scholarly journals Electroanalytical Performance of Nitrogen-Doped Graphene Films Processed in One Step by Pulsed Laser Deposition Directly Coupled with Thermal Annealing

Materials ◽  
2019 ◽  
Vol 12 (4) ◽  
pp. 666 ◽  
Author(s):  
Florent Bourquard ◽  
Yannick Bleu ◽  
Anne-Sophie Loir ◽  
Borja Caja-Munoz ◽  
José Avila ◽  
...  
Keyword(s):  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Graphene Film ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Synthesis Process ◽  
Nitrogen Doped ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene ◽  
One Step

Graphene-based materials are widely studied to enable significant improvements in electroanalytical devices requiring new generations of robust, sensitive and low-cost electrodes. In this paper, we present a direct one-step route to synthetize a functional nitrogen-doped graphene film onto a Ni-covered silicon electrode substrate heated at high temperature, by pulsed laser deposition of carbon in the presence of a surrounding nitrogen atmosphere, with no post-deposition transfer of the film. With the ferrocene methanol system, the functionalized electrode exhibits excellent reversibility, close to the theoretical value of 59 mV, and very high sensitivity to hydrogen peroxide oxidation. Our electroanalytical results were correlated with the composition and nanoarchitecture of the N-doped graphene film containing 1.75 at % of nitrogen and identified as a few-layer defected and textured graphene film containing a balanced mixture of graphitic-N and pyrrolic-N chemical functions. The absence of nitrogen dopant in the graphene film considerably degraded some electroanalytical performances. Heat treatment extended beyond the high temperature graphene synthesis did not significantly improve any of the performances. This work contributes to a better understanding of the electrochemical mechanisms of doped graphene-based electrodes obtained by a direct and controlled synthesis process.

Low Temperature Growth Of Barium Strontium Titanate Films By Ultraviolet-Assisted Pulsed Laser Deposition

2000 ◽  
Vol 617 ◽  
Author(s):  
V. Craciun ◽  
J. M. Howard ◽  
E. S. Lambers ◽  
R. K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Photoelectron Spectroscopy ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Flat Band ◽  
Si Substrates ◽  
Barium Strontium

AbstractBarium strontium titanate (BST) thin films were grown directly on Si substrates by an in situ ultraviolet (UV)-assisted pulsed laser deposition (UVPLD) technique. With respect to films grown by conventional (i.e. without UV illumination) pulsed laser deposition (PLD), the UVPLD grown films exhibited improved structural and electrical properties. The dielectric constant of a 40-nm thick film deposited at 650 °C was determined to be 281, the leakage current density was approximately 4×10−8 A/cm2at 100 kV/cm, and the density of interface states at the flat-band voltage was found to be approximately 5.6×1011 eV−1 cm−2 X-ray photoelectron spectroscopy investigations found that the surface of the grown films exhibited an additional Ba-containing phase, besides the usual BST perovskite phase, which was likely caused by stress and/or oxygen vacancies. The amount of this new phase was always smaller and very superficial for UVPLD grown films, which can explain their better overall properties.

scholarly journals Optical Properties of Nitrogen-Substituted Strontium Titanate Thin Films Prepared by Pulsed Laser Deposition

Materials ◽  
2009 ◽  
Vol 2 (3) ◽  
pp. 1388-1401 ◽  
Author(s):  
Ivan Marozau ◽  
Andrey Shkabko ◽  
Max Döbeli ◽  
Thomas Lippert ◽  
Dimitri Logvinovich ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition

Microstructure of homoepitaxial strontium titanate films grown by pulsed laser deposition

2006 ◽  
Vol 515 (4) ◽  
pp. 1788-1795 ◽  
Author(s):  
Y.Y. Tse ◽  
Y. Koutsonas ◽  
T.J. Jackson ◽  
G. Passerieux ◽  
I.P. Jones
Keyword(s):  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition

scholarly journals Substrate Temperature-Dependent Structural, Optical, and Electrical Properties of Thermochromic VO2(M) Nanostructured Films Grown by a One-Step Pulsed Laser Deposition Process on Smooth Quartz Substrates

2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Ali Hendaoui
Keyword(s):  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Processing Temperature ◽  
Present Contribution ◽  
Valence States ◽  
One Step ◽  
Quartz Substrates

Thermochromic M-phase vanadium dioxide VO2(M) films with different morphologies have been grown directly on smooth fused quartz substrates using low deposition rate pulsed laser deposition without posttreatment. When the substrate temperature was increased in the range 450°C–750°C, better (011) texturization of VO2(M) films was observed along with an enhancement of their crystallinity. Morphology evolved from small-grained and densely packed VO2(M) grains at 450°C to less packed micro/nanowires at 750°C. Mechanisms behind the crystallinity/morphology evolution were discussed and correlated with the effect of the temperature on the diffusion of the adatoms as well as on the V5+ valence states content in VO2(M) films. Resistivity measurements as a function of temperature revealed that the insulator-to-metal transition features of VO2(M) films (i.e., transition temperature (TIMT), resistivity variation (ΔR), hysteresis width (ΔH), and transition sharpness (ΔT)) are strongly dependent on the processing temperature. In terms of optical properties, it was found that the open (i.e., porous) structure of the films achieved at high temperature induced an improvement of their luminous transmittance. Simultaneously, the enhancement of the films crystallinity with the temperature resulted in better IR modulation ability. The present contribution provides a one-step process to control the morphology of VO2(M) films grown on smooth quartz substrates for applications as switches, memory devices, and smart windows.

scholarly journals Homogeneous vertical ZnO nanorod arrays with high conductivity on an in situ Gd nanolayer

RSC Advances ◽  
2015 ◽  
Vol 5 (115) ◽  
pp. 94670-94678 ◽  
Author(s):  
Tahani H. Flemban ◽  
Venkatesh Singaravelu ◽  
Assa Aravindh Sasikala Devi ◽  
Iman S. Roqan
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Conductivity ◽  
Laser Deposition ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
One Step ◽  
Size Controlled

We demonstrate a novel, one-step, catalyst-free method for the production of size-controlled vertical highly conductive ZnO nanorod arrays with highly desirable characteristics on anin situuniform Gd nanolayer using pulsed laser deposition.

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