β-sheet to α-helix conversion and thermal stability of β-Galactosidase encapsulated in a nanoporous silica gel

2019 ◽  
Vol 508 (1) ◽  
pp. 270-274 ◽  
Author(s):  
M. Ines Burgos ◽  
Aylen Ochoa ◽  
María A. Perillo
2018 ◽  
Vol 102 (18) ◽  
pp. 7891-7900 ◽  
Author(s):  
Xiaolin Pei ◽  
Jiapao Wang ◽  
Yifeng Wu ◽  
Xiaoting Zhen ◽  
Manman Tang ◽  
...  

2011 ◽  
Vol 239-242 ◽  
pp. 294-297
Author(s):  
Cun Jin Xu ◽  
Qun Lü ◽  
Hai Ke Feng

A ternary Eu(III) complex with salicylic acid (Hsal) ando-phenanthroline (phen) was synthesized and then incorporated into silica matrix by sol-gel method. The luminescence behavior of the complex in silica gel was studied compared with that of the pure complex by means of emission, excitation spectra and thermogravimetic analysis. The results indicate that the complex Eu(sal)3(phen) in silica gel shows fewer emission lines than pure Eu(sal)3(phen) and the luminescence intensity ratio of the5D0→7F2transition to the5D0→7F1transition is lower than that of the latter. The thermal stability of Eu(sal)3(phen) is enhanced greatly through the introduction of the complex into silica matrix.


2003 ◽  
Vol 1651 (1-2) ◽  
pp. 139-145 ◽  
Author(s):  
Christian Zscherp ◽  
Hüseyin Aygün ◽  
Joachim W. Engels ◽  
Werner Mäntele

1984 ◽  
Vol 20 (6) ◽  
pp. 303-305
Author(s):  
T. G. Skryabina ◽  
L. N. Petrova ◽  
E. M. Nikonorov ◽  
R. G. Platonova

2004 ◽  
Vol 71 (2) ◽  
pp. 207-215 ◽  
Author(s):  
Joyce I Boye ◽  
Ching Y Ma ◽  
Ashraf Ismail

Fourier transform infrared spectroscopy (FTIR) and differential scanning calorimetry (DSC) were used to monitor changes in the secondary structure and thermal stability of β-lactoglobulin A and B in the presence of sodium dodecyl sulphate (SDS), N-ethylmaleimide (NEM), urea and cysteine. An increase in the thermal stabilities of both proteins was noted in the presence of 10 mM-SDS. In the presence of 50 mM-SDS, there was extensive denaturation of both variants. In general, the β-strand/β-sheet regions in the secondary structure of both variants were very susceptible to denaturation by SDS and cysteine, suggesting that these regions may be held by hydrophobic and disulphide bonds. At ambient temperature and physiological pH, a notable difference was observed in the 1636 and 1627 cm−1 regions of the FTIR spectra of the two β-lg variants. The results suggest possible differences in the nature of the β-sheet/β-strand distribution/content of the two proteins. Urea and NEM at a concentration of 50 mM, had little effect on the secondary structure and denaturation of both variants. New findings are presented which further indicate that although the β-lg B variant showed greater thermal stability than the A variant in all the cases studied, its denaturation temperature and secondary structure were affected to a greater extent by the protein perturbants than β-lg A.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


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