Rapid determination of monopersulfate with bromide ion-catalyzed oxidation of 2, 2′-azino-bis(3-ethylbenzothiazoline-6-sulfonic acid (ABTS)

2021 ◽  
pp. 133551
Author(s):  
Xin Liu ◽  
Qi Fu ◽  
Peng Xu ◽  
Pengfei Zhu ◽  
Zhuoyu Yang ◽  
...  
1995 ◽  
Vol 78 (3) ◽  
pp. 841-845 ◽  
Author(s):  
Bertil Lindgren ◽  
Tomas Berglöf ◽  
Åsa Ramberg ◽  
Anna Stepdmska ◽  
Malin Åkerblom

Abstract A method is presented for rapid determination of bromide ion in commodities and blood by paired-ion liquid chromatography with electrochemical detection. The method involves extraction of samples with water and filtration. Blood is passed through a Sep-Pak C18 minicolumn. Recoveries are usually close to 100%, with satisfactory precision. The detection limit is 1 mg/kg. The method needs little labor and uses no noxious solvents or reagents.


1988 ◽  
Vol 53 (6) ◽  
pp. 1162-1171 ◽  
Author(s):  
Petr Doležel ◽  
Vlastimil Kubáň

2-(2-Pyridylazo)-1-naphthol-4-sulfonic acid (1PAN4S) was used to develop a method for the simultaneous spectrophotometric determination of Cu(II), Ni(II), and Co(III) by reverse flow injection analysis (FIA) using a multichannel UV-VIS detector with a diode array. The method can be used to determine the individual ions in the range 5-50 μmol dm-3 Ni(II) or Cu(II) and 5-60 μmol dm-3 Co(III) in binary and ternary mixtures at ratios of 1 : 1 to 1 : 10 with a maximal relative deviation of units of per cent for the major components and tens of per cent for the minor components. The precision and accuracy of the determination are the same or slightly worse than for stationary measurements with half to one fifth the sensitivity. Measurement of the absorption spectra for the maximum analytical signal in digital form for c(1PAN4S) = 0·12 mmol dm-3, c(NaIO4) = 1·2 mmol dm-3 in 0·2M acetate buffer medium at pH 5·00 permits rapid determination (15 s per sample) of all the components using a simple program for multicomponent analysis in "overdetermined" systems.


Author(s):  
T. Y. Tan ◽  
W. K. Tice

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.


2017 ◽  
Vol 45 (2) ◽  
pp. 455-464
Author(s):  
T.T. Xue ◽  
J. Liu ◽  
Y.B. Shen ◽  
G.Q. Liu

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