Preparation and ferroelectric properties of (Na0.5Bi0.5)0.94Ba0.06TiO3 thin films deposited on Pt electrodes using LaNiO3 as buffer layer

2012 ◽  
Vol 38 ◽  
pp. S83-S86 ◽  
Author(s):  
Xiao-lei Fang ◽  
Bo Shen ◽  
Ji-wei Zhai ◽  
Xi Yao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Ferroelectric Properties ◽  
Pt Electrodes

Growth behavior and ferroelectric properties of Zr-rich PZT thin films deposited on various Pt electrodes

1999 ◽  
Vol 23 (1-4) ◽  
pp. 65-75 ◽  
Author(s):  
Suk-Kyoung Hong ◽  
Yong Eui Lee ◽  
J. Lee ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Growth Behavior ◽  
Pzt Thin Films ◽  
Pt Electrodes

The influence of SrTiO3 buffer layer on ferroelectric properties of Al-doped BaTiO3 thin films

2014 ◽  
Vol 33 (1-2) ◽  
pp. 47-52 ◽  
Author(s):  
Ahmed I. Ali ◽  
V. Senthikuma ◽  
Ill-Won Kim ◽  
Yong Soo Kim
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Ferroelectric Properties

Comparative analysis for the crystalline and ferroelectric properties of Pb(Zr,Ti)O3 thin films deposited on metallic LaNiO3 and Pt electrodes

2002 ◽  
Vol 410 (1-2) ◽  
pp. 107-113 ◽  
Author(s):  
B.G. Chae ◽  
Y.S. Yang ◽  
S.H. Lee ◽  
M.S. Jang ◽  
S.J. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Comparative Analysis ◽  
Ferroelectric Properties ◽  
Pt Electrodes

Effect of LaNiO3 Buffer Layer on Ferroelectric Properties of Ba(Zr,Ti)O3 Thin Films

2012 ◽  
Vol 140 (1) ◽  
pp. 116-122 ◽  
Author(s):  
Wei Li ◽  
Qigang Zhou ◽  
Jigong Hao ◽  
Wangfeng Bai ◽  
Jiwei Zhai
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Ferroelectric Properties

Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

2013 ◽  
Vol 102 (11) ◽  
pp. 112914 ◽  
Author(s):  
Min Hyuk Park ◽  
Han Joon Kim ◽  
Yu Jin Kim ◽  
Woongkyu Lee ◽  
Hyo Kyeom Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Pt Electrodes

Effects of bi2o3 buffer layer on ferroelectric properties of srbi2ta2o9 thin films by liquid-delivery mocvd

2001 ◽  
Vol 36 (1-4) ◽  
pp. 295-304
Author(s):  
Woong Chul Shin ◽  
Kyu Jeong Choi ◽  
Nak Jin Seong ◽  
Soon Gil Yoon
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Ferroelectric Properties ◽  
Liquid Delivery

The Effects of Various Substrate Temperature of Bi2O3 Buffer Layer on SBT (SrBi2Ta2O9) Thin Films Deposited by R.F. Magnetron Sputtering

2008 ◽  
Vol 569 ◽  
pp. 137-140
Author(s):  
Ji Eon Yoon ◽  
Won Hyo Cha ◽  
Dong Hyun Hwang ◽  
Chul Su Lee ◽  
In Seok Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Buffer Layer ◽  
Ferroelectric Properties ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lower Temperature ◽  
Temperature Crystallization

The SBT(SrBi2Ta2O9) thin films with Bi2O3 buffer layer were deposited on Pt/Ti/SiO2/Si substrate by R.F. magnetron sputtering method in order to improve the ferroelectric characteristics. In SBT thin films, the deficiency of bismuth due to its volatility during the process results in an obvious non stoichiometry of the films and the presence of secondary phases. Bi2O3 buffer layer was found to be effective to achieve lower temperature crystallization and improve ferroelectric properties of SBT thin films. Ferroelectric properties and crystallinities of SBT thin films with various substrate temperature of Bi2O3 buffer layer were observed, using X-Ray Diffraction (XRD), Precision LC (Radient Technologies. Inc.) and GDS (glow discharge spectrometer).

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