Nanoscale study of the ferroelectric properties of SrBi2Nb2O9 thin films grown by pulsed laser deposition on epitaxial Pt electrodes using atomic force microscope

The influence of sintering and annealing temperatures on the structural, surface morphology, and optical properties of Ag2Cu2O4 thin films which deposited on glass substrates by pulsed laser deposition method have been studied. Ag2Cu2O4 powders have polycrystalline structure, and the Ag2Cu2O4 phase was appear as low intensity peak at 35.57o which correspond the reflection from (110) plane. Scan electron microscopy images of Ag2Cu2O4 powder has been showed agglomerate of oxide particles with platelets shape. The structure of thin films has been improved with annealing temperature. Atomic Force micrographs of Ag2Cu2O4 films showed uniform, homogenous films and the shape of grains was almost spherical and larger grain size of 97.85 nm has obtained for film sintered at 600 °C. The optical band gap was increase from 1.6 eV to 1.65 eV when sintering temperature increased to 300 °C and decrease to 1.45 eV at 600 °C for the films deposited at room temperature. Heat treatment of films has been increased the energy band with increasing sintering temperature. Hall coefficient of Ag2Cu2O4 films have a positive sign which means the charge carrier is a p-type. The electrical conductivity decreases with increasing of the sintering temperature for as deposited and annealed films.

Download Full-text

Cross-Sectional Nanoindentation of Alumina Thin Films Deposited by Pulsed Laser Deposition Process

Materials, Nondestructive Evaluation, and Pressure Vessels and Piping ◽

10.1115/imece2006-14924 ◽

2006 ◽

Author(s):

Sudheer Neralla ◽

Sergey Yarmolenko ◽

Dhananjay Kumar ◽

Devdas Pai ◽

Jag Sankar

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

High Hardness ◽

Deposition Process ◽

Laser Deposition ◽

Cross Sectional ◽

Adhesion Properties ◽

Force Microscopy ◽

Atomic Force

Alumina is a widely used ceramic material due to its high hardness, wear resistance and dielectric properties. The study of phase transformation and its correlation to the mechanical properties of alumina is essential. In this study, interfacial adhesion properties of alumina thin films are studied using cross-sectional nanoindentation (CSN) technique. Alumina thin films are deposited at 200 and 700 °C, on Si (100) substrates with a weak Silica interface, using pulsed laser deposition (PLD) process. Effect of annealing on the surface morphology of the thin films is studied using atomic force microscopy. Xray diffraction studies revealed that alumina thin films are amorphous in nature at 200 °C and polycrystalline with predominant gamma alumina phase at 700 °C.

Download Full-text

Pulsed Laser Deposition and Characterization of InZnO Alloyed Thin Film

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.368-372.308 ◽

2008 ◽

Vol 368-372 ◽

pp. 308-311

Author(s):

F.K. Shan ◽

G.X. Liu ◽

Byoung Chul Shin ◽

Won Jae Lee ◽

W.T. Oh

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Atomic Ratio ◽

Laser Deposition ◽

Morphological Properties ◽

High Quality ◽

Atomic Force ◽

Different Temperatures ◽

Zno Powder

High-quality In2O3 powder and ZnO powder had been used to make the ceramic target and the atomic ratio of 1 to 1 of indium and zinc had been prepared in this study. The alloyed thin films had been deposited on sapphire (001) substrates at different temperatures (100–600°C) by using pulsed laser deposition (PLD) technique. An x-ray diffractometer and an atomic force microscope were used to investigate the structural and morphological properties of the alloyed thin films. It was observed that the alloyed thin films deposited at the temperatures lower than 300°C were amorphous, and the alloyed thin films deposited at high temperatures were crystallized. A spectrophotometer was used to investigate the transmittances of the alloyed thin films. It was found that the alloyed thin films were of high quality. The band gap energies of the alloys were calculated by linear fitting the sharp absorption edges of the transmittance spectra. The Hall measurements were also carried out to identify the electrical properties of the thin films.

Download Full-text

Structural and ferroelectric properties of (Bi,Ce)4Ti3O12 thin films grown by pulsed laser deposition for ferroelectric random access memories

Applied Surface Science ◽

10.1016/j.apsusc.2003.11.064 ◽

2004 ◽

Vol 227 (1-4) ◽

pp. 187-192 ◽

Cited By ~ 9

Author(s):

Young-Nam Oh ◽

Soon-Gil Yoon

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Ferroelectric Properties ◽

Random Access ◽

Pulsed Laser ◽

Laser Deposition ◽

Ferroelectric Random Access Memories

Download Full-text

Influence of Post Growth Annealing on the Optical Properties of Gallium Nitride Films Grown by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/opl.2012.1029 ◽

2012 ◽

Vol 1432 ◽

Author(s):

M. Baseer Haider ◽

M. F. Al-Kuhaili ◽

S. M. A. Durrani ◽

Imran Bakhtiari

Keyword(s):

Thin Films ◽

Gallium Nitride ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Nitrogen Atmosphere ◽

Laser Deposition ◽

Optical Measurements ◽

X Ray ◽

Force Microscopy ◽

Atomic Force

Abstract:Gallium nitride thin films were grown by pulsed laser deposition. Subsequently, post-growth annealing of the samples was performed at 400, and 600 oC in the nitrogen atmosphere. Surface morphology of the as-grown and annealed samples was performed by atomic force microscopy, surface roughness of the films improved after annealing. Chemical analysis of the samples was performed using x-ray photon spectroscopy, stoichiometric Gallium nitride thin films were obtained for the samples annealed at 600 oC. Optical measurements of the samples were performed to investigate the effect of annealing on the band gap and optical constants the films.

Download Full-text

Stability and Structural Characterization of Epitaxial NdNiO3 Films Grown by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-658-gg3.27 ◽

2000 ◽

Vol 658 ◽

Cited By ~ 2

Author(s):

Trong-Duc Doan ◽

Cobey Abramowski ◽

Paul A. Salvador

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Substrate Surface ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

Force Microscopy ◽

Atomic Force ◽

Monoclinic Distortion

ABSTRACTThin films of NdNiO3 were grown using pulsed laser deposition on single crystal substrates of [100]-oriented LaAlO3 and SrTiO3. X-ray diffraction and reflectivity, scanning electron microscopy, and atomic force microscopy were used to characterize the chemical, morphological and structural traits of the thin films. Single-phase epitaxial films are grown on LaAlO3 and SrTiO3 at 625°C in an oxygen pressure of 200 mTorr. At higher temperatures, the films partially decompose to Nd2NiO4 and NiO. The films are epitaxial with the (101) planes (orthorhombic Pnma notation) parallel to the substrate surface. Four in-plane orientational variants exist that correspond to the four 90° degenerate orientations of the film's [010] with respect to the in-plane substrate directions. Films are observed to be strained in accordance with the structural mismatch to the underlying substrate, and this leads, in the thinnest films on LaAlO3, to an apparent monoclinic distortion to the unit cell.

Download Full-text

Ferroelectric Properties of (Na0.5K0.5)NbO3-Based Thin Films Deposited on Pt/(001)MgO Substrate by Pulsed Laser Deposition with NaNbO3Buffer Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.09ka13 ◽

2009 ◽

Vol 48 (9) ◽

pp. 09KA13 ◽

Cited By ~ 16

Author(s):

Seiji Yamazoe ◽

Yuzo Miyoshi ◽

Kazuki Komaki ◽

Hideaki Adachi ◽

Takahiro Wada

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Laser Deposition ◽

Mgo Substrate

Download Full-text

Combined pulsed laser deposition and non-contact atomic force microscopy system for studies of insulator metal oxide thin films

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.9.63 ◽

2018 ◽

Vol 9 ◽

pp. 686-692 ◽

Cited By ~ 4

Author(s):

Daiki Katsube ◽

Hayato Yamashita ◽

Satoshi Abo ◽

Masayuki Abe

Keyword(s):

Thin Films ◽

Atomic Force Microscopy ◽

Metal Oxide ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Film Surface ◽

Laser Deposition ◽

Combined System ◽

Force Microscopy ◽

Atomic Force

We have designed and developed a combined system of pulsed laser deposition (PLD) and non-contact atomic force microscopy (NC-AFM) for observations of insulator metal oxide surfaces. With this system, the long-period iterations of sputtering and annealing used in conventional methods for preparing a metal oxide film surface are not required. The performance of the combined system is demonstrated for the preparation and high-resolution NC-AFM imaging of atomically flat thin films of anatase TiO2(001) and LaAlO3(100).

Download Full-text