The influence of oxygen partial pressure on the performance and stability of Ge-doped InGaO thin film transistors

2014 ◽  
Vol 40 (2) ◽  
pp. 3215-3220 ◽  
Author(s):  
Kwang-Ho Lee ◽  
Kyung-Chul Ok ◽  
H. Kim ◽  
Jin-Seong Park
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors

Influence of oxygen partial pressure in In-Sn-Ga-O thin-film transistors at a low temperature

2019 ◽  
Vol 805 ◽  
pp. 211-217 ◽  
Author(s):  
Changyong Oh ◽  
Hyunjae Jang ◽  
Hyeong Wook Kim ◽  
Hyunjae Jung ◽  
Hyungryul Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors

Deep-level defect distribution as a function of oxygen partial pressure in sputtered ZnO thin-film transistors

2016 ◽  
Vol 16 (10) ◽  
pp. 1369-1373 ◽  
Author(s):  
Jinhee Park ◽  
You Seung Rim ◽  
Chao Li ◽  
Hyung-Seok Kim ◽  
Mark Goorsky ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors ◽  
Deep Level ◽  
Zno Thin Film ◽  
Deep Level Defect ◽  
Defect Distribution

Tunable Performance of P-Type Cu2O/SnO Bilayer Thin Film Transistors

2014 ◽  
Vol 93 ◽  
pp. 260-263
Author(s):  
H.A. Al-Jawhari ◽  
J.A. Caraveo-Frescas ◽  
M.N. Hedhili
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Device Performance ◽  
P Type ◽  
Bottom Gate

Novel tunable p-type thin film transistors (TFTs) were developed by adopting Cu2O/SnO bilayer channel scheme. Using Cu2O film produced at a relative oxygen partial pressure Opp of 10% - as an upper layer - and 3% Opp SnO films - as lower layers - we built a matrix of bottom gate Cu2O/SnO bilayer TFTs with different thicknesses. We found that the thickness of the Cu2O layer plays a major role in the oxidization process exerted onto the SnO layer underneath. The thicker the Cu2O layer the more the underlying SnO layer is oxidized, and hence, the more the transistor mobility is enhanced at a certain temperature. Both the device performance and the required annealing temperature could then be tuned by controlling the thickness of each layer of the Cu2O/SnO bilayer TFT.

Effect of oxygen partial pressure on the density of states of amorphous InGaZnO thin-film transistors

2016 ◽  
Vol 122 (10) ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Wen-Qing Zhu ◽  
Jian-Hua Zhang ◽  
Xue-Yin Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Effect Of Oxygen ◽  
Amorphous Ingazno

22.2: The influence of Oxygen Partial Pressure on the Performance of back‐channel‐etched a‐ZTO Thin‐Film Transistors

2019 ◽  
Vol 50 (S1) ◽  
pp. 216-219
Author(s):  
Hongyang Zuo ◽  
Xiaodong Zhang ◽  
Yukun Yang ◽  
Huan Yang ◽  
Shengdong Zhang
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors

Effects of Oxygen Partial Pressure on the Electrical Characteristics of InGaZnO Thin Film Transistors

2009 ◽  
Vol 54 (1) ◽  
pp. 121-126 ◽  
Author(s):  
Yeon-Keon Moon ◽  
Sih Lee ◽  
Jong-Wan Park ◽  
Do-Hyun Kim ◽  
Je-Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors ◽  
Electrical Characteristics
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