Influence of Oxygen Partial Pressure on Radio Frequency Magnetron Sputtered Amorphous InZnSnO Thin Film Transistors

2020 ◽  
Vol 20 (1) ◽  
pp. 252-256 ◽  
Author(s):  
Annisa Dwi Lestari ◽  
Maryane Putri ◽  
Young-Woo Heo ◽  
Hee Young Lee
Keyword(s):  
Thin Film ◽  
Radio Frequency ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors ◽  
Radio Frequency Magnetron

Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering

2008 ◽  
Vol 52 (5) ◽  
pp. 813-816 ◽  
Author(s):  
R. Navamathavan ◽  
Chi Kyu Choi ◽  
Eun-Jeong Yang ◽  
Jae-Hong Lim ◽  
Dae-Kue Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thin Film Transistors ◽  
Radio Frequency Magnetron ◽  
Zno Thin Film ◽  
Radio Frequency Magnetron Sputtering

Influence of oxygen partial pressure in In-Sn-Ga-O thin-film transistors at a low temperature

2019 ◽  
Vol 805 ◽  
pp. 211-217 ◽  
Author(s):  
Changyong Oh ◽  
Hyunjae Jang ◽  
Hyeong Wook Kim ◽  
Hyunjae Jung ◽  
Hyungryul Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors

Deep-level defect distribution as a function of oxygen partial pressure in sputtered ZnO thin-film transistors

2016 ◽  
Vol 16 (10) ◽  
pp. 1369-1373 ◽  
Author(s):  
Jinhee Park ◽  
You Seung Rim ◽  
Chao Li ◽  
Hyung-Seok Kim ◽  
Mark Goorsky ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors ◽  
Deep Level ◽  
Zno Thin Film ◽  
Deep Level Defect ◽  
Defect Distribution

Tunable Performance of P-Type Cu2O/SnO Bilayer Thin Film Transistors

2014 ◽  
Vol 93 ◽  
pp. 260-263
Author(s):  
H.A. Al-Jawhari ◽  
J.A. Caraveo-Frescas ◽  
M.N. Hedhili
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Device Performance ◽  
P Type ◽  
Bottom Gate

Novel tunable p-type thin film transistors (TFTs) were developed by adopting Cu2O/SnO bilayer channel scheme. Using Cu2O film produced at a relative oxygen partial pressure Opp of 10% - as an upper layer - and 3% Opp SnO films - as lower layers - we built a matrix of bottom gate Cu2O/SnO bilayer TFTs with different thicknesses. We found that the thickness of the Cu2O layer plays a major role in the oxidization process exerted onto the SnO layer underneath. The thicker the Cu2O layer the more the underlying SnO layer is oxidized, and hence, the more the transistor mobility is enhanced at a certain temperature. Both the device performance and the required annealing temperature could then be tuned by controlling the thickness of each layer of the Cu2O/SnO bilayer TFT.

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