Fabrication of stable monoclinic zirconia-based ceramics

Author(s):  
Justin Jetter ◽  
Jascha Rohmer ◽  
Maike Wegner ◽  
Eckhard Quandt
Keyword(s):  
Author(s):  
R.A. Ploc

The manner in which ZrO2 forms on zirconium at 300°C in air has been discussed in the first reference. In short, monoclinic zirconia nucleates and grows with a preferred orientation relative to the metal substrate. The mode of growth is not well understood since an epitaxial relationship which gives minimum misfit between the zirconium ions in the metal/oxide combination is not realized. The reason may be associated with a thin cubic or tetragonal layer of ZrO2 between the inner oxygen saturated metal and the outer monoclinic zirconia.


Author(s):  
Ritika Wadhwa ◽  
Krishna K. Yadav ◽  
Tanmay Goswami ◽  
Ankush ◽  
Sujit Kumar Guchhait ◽  
...  

2002 ◽  
Vol 20 (10) ◽  
pp. 977-993
Author(s):  
Gamal M.S. El Shafei ◽  
Christine A. Philip

Calcination at 650°C of a physical mixture of zirconium and titanium hydroxides led to the formation of the corresponding oxides, monoclinic zirconia and anatase. The adsorption of perchlorate or persulphate anions (as 0.05, 0.1, 0.2 or 0.4 M aqueous solutions) before calcination did not inhibit crystallization; however, perchlorate anions activated the formation of rutile in addition to the predominant anatase phase. Indeed, the adsorption of perchlorated anions prior to calcination allowed the thermodynamically less stable tetragonal phase of zirconia to be detected in addition to monoclinic zirconia at ambient temperature. In contrast, the adsorption of persulphate anions before calcination stabilized the tetragonal phase with no rutile phase being detected in this case. Infrared spectroscopy showed that adsorbed S2O82– anions were held more strongly by the solid than ClO4− anions which tended to decompose when the solid was calcined. The acidities of the solid acids produced because of S2O82– or ClO4−anion adsorption were studied via the adsorption of pyridine (pKa = 5.3) from cyclohexane solution. The amounts and strengths of the acid sites formed during persulphate treatment were higher than those resulting from perchlorate adsorption. The strength of the acid sites formed on samples calcined before loading with S2O82– or ClO4− anions showed no significant differences. Variations detected in the structural aspects arising from S2O82– or ClO4− anion adsorption were reflected in the texture as assessed by nitrogen adsorption at −196°C.


2004 ◽  
Vol 87 (3) ◽  
pp. 358-364 ◽  
Author(s):  
Gerd Scheying ◽  
Ingrid Wührl ◽  
Ulrich Eisele ◽  
Ralf Riedel

2016 ◽  
Vol 174 ◽  
pp. 49-55 ◽  
Author(s):  
Valter Kiisk ◽  
Laurits Puust ◽  
Kathriin Utt ◽  
Aarne Maaroos ◽  
Hugo Mändar ◽  
...  

2005 ◽  
Vol 890 ◽  
Author(s):  
Hiroshi Masumoto ◽  
Takashi Goto

ABSTRACTIt is known that zirconia has excellent thermal and chemical stability, and oxide ion conduction. Therefore, YSZ is expected to be used as oxide ion conducting materials, optical mirror materials, catalytic materials and heat-resistant materials. Zirconia films have been fabricated by PVD (ex. sputtering and laser-ablation), chemical vapor deposition (CVD) and sol-gel methods. CVD is capable to prepare high quality zirconia films with excellent conformal coverage; however, deposition temperature of conventional CVD was usually high than PVD. On the other hand, an electron cyclotron resonance (ECR) plasma is high-activity plasma and high quality crystalline films can be obtained at low temperature by using ECR plasma. In the present study, zirconia thin films were prepared at low temperatures on quartz, polycarbonate and polyimide substrates by ECR plasma MOCVD.Zr-hexafluoroacetylacetonato solution was used as a precursor. The source, which was placed in a glass bubbler, was carried into a reactor by Ar gas. A microwave (2.45 GHz, 500 W) was introduced into the ion chamber through a rectangular wave guide. A magnetic field (875 Gauss) was applied to the ion chamber to satisfy the ECR condition. A mirror-type magnetic field (450 Gauss at the substrate stage) was applied in order to raise a plasma density, which results in an increase of the deposition rates of films. Substrate temperature (Ts) was from 30 to 700 C by water-cooling holder and infrared lamp heater. Microwave power was changed from 0 to 900 W. The deposition time was from 30 to 120 minutes.Cubic, monoclinic and tetragonal zirconia films were obtained over Ts=400 C, and cubic and monoclinic zirconia films were obtained below Ts= C. Cubic and monoclinic zirconia films were also obtained at no heating. The deposition rate increased from 10 to 20 nm/min with increasing Ts from no heating to 600 C. Crystallized zirconia films were obtained on polycarbonate and polyimide substrates at no heating. The ECR plasma was significantly effective to prepare crystallized zirconia films at low temperatures.


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