Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities

2021 ◽  
Author(s):  
Qiqi Peng ◽  
Xu Jiang ◽  
Yifan Chen ◽  
Wei Zhang ◽  
Jun Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Domain Wall ◽  
Large Domain ◽  
Thin Film Capacitors ◽  
Srruo3 Thin Film

Temperature-dependent leakage mechanisms of Pt∕BiFeO3∕SrRuO3 thin film capacitors

2007 ◽  
Vol 91 (7) ◽  
pp. 072911 ◽  
Author(s):  
H. Yang ◽  
M. Jain ◽  
N. A. Suvorova ◽  
H. Zhou ◽  
H. M. Luo ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Dependent ◽  
Thin Film Capacitors ◽  
Srruo3 Thin Film

scholarly journals Nonlinear domain wall velocity in ferroelectric Si-doped HfO2 thin film capacitors

2021 ◽  
Vol 118 (10) ◽  
pp. 102902
Author(s):  
So Yeon Lim ◽  
Min Sun Park ◽  
Ahyoung Kim ◽  
Sang Mo Yang
Keyword(s):  
Thin Film ◽  
Domain Wall ◽  
Wall Velocity ◽  
Domain Wall Velocity ◽  
Thin Film Capacitors ◽  
Si Doped

scholarly journals Single-spin sensing of domain-wall structure and dynamics in a thin-film skyrmion host

2019 ◽  
Vol 3 (8) ◽  
Author(s):  
Alec Jenkins ◽  
Matthew Pelliccione ◽  
Guoqiang Yu ◽  
Xin Ma ◽  
Xiaoqin Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Domain Wall ◽  
Wall Structure ◽  
Single Spin ◽  
Structure And Dynamics ◽  
Domain Wall Structure

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

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