In this paper, first-principles calculations of structural, electronic, optical and thermoelectric properties of AgMO 3 ( M = V , Nb and Ta ) have been carried out using full potential linearized augmented plane wave plus local orbitals method ( FP - LAPW + lo ) and BoltzTraP code within the framework of density functional theory (DFT). The calculated structural parameters are found to agree well with the experimental data, while the electronic band structure indicates that AgNbO 3 and AgTaO 3 are semiconductors with indirect bandgaps of 1.60 eV and 1.64 eV, respectively, between the occupied O 2p and unoccupied d states of Nb and Ta . On the other hand, AgVO 3 is found metallic due to the overlapping behavior of states across the Fermi level. Furthermore, optical properties, such as dielectric function, absorption coefficient, optical reflectivity, refractive index and extinction coefficient of AgNbO 3 and AgTaO 3, are calculated for incident photon energy up to 50 eV. Finally, we calculate thermo power for AgNbO 3 and AgTaO 3 at fixed doping 1019 cm-3. Electron doped thermo power of AgNbO 3 shows significant increase over AgTaO 3 with temperature.