Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models

2006 ◽  
Vol 195 (19-22) ◽  
pp. 2193-2208 ◽  
Author(s):  
Giuseppe Cassano ◽  
Carlo de Falco ◽  
Claudio Giulianetti ◽  
Riccardo Sacco
Keyword(s):  
Numerical Simulation ◽  
Semiconductor Devices ◽  
Diffusion Models ◽  
Drift Diffusion

Quantum-corrected drift-diffusion models for transport in semiconductor devices

2005 ◽  
Vol 204 (2) ◽  
pp. 533-561 ◽  
Author(s):  
Carlo de Falco ◽  
Emilio Gatti ◽  
Andrea L. Lacaita ◽  
Riccardo Sacco
Keyword(s):  
Semiconductor Devices ◽  
Diffusion Models ◽  
Drift Diffusion

scholarly journals Formulation of Macroscopic Transport Models for Numerical Simulation of Semiconductor Devices

VLSI Design ◽  
1995 ◽  
Vol 3 (2) ◽  
pp. 211-224 ◽  
Author(s):  
Edwin C. Kan ◽  
Zhiping Yu ◽  
Robert W. Dutton ◽  
Datong Chen ◽  
Umberto Ravaioli
Keyword(s):  
Numerical Simulation ◽  
Computational Efficiency ◽  
Recent Progress ◽  
Energy Transport ◽  
Semiconductor Devices ◽  
Boltzmann Transport Equation ◽  
Boltzmann Transport ◽  
Drift Diffusion ◽  
Thermoelectric Effects ◽  
Transport Models

According to different assumptions in deriving carrier and energy flux equations, macroscopic semiconductor transport models from the moments of the Boltzmann transport equation (BTE) can be divided into two main categories: the hydrodynamic (HD) model which basically follows Bløtekjer's approach [1, 2], and the Energy Transport (ET) model which originates from Strattton's approximation [3, 4]. The formulation, discretization, parametrization and numerical properties of the HD and ET models are carefully examined and compared. The well-known spurious velocity spike of the HD model in simple nin structures can then be understood from its formulation and parametrization of the thermoelectric current components. Recent progress in treating negative differential resistances with the ET model and extending the model to thermoelectric simulation is summarized. Finally, we propose a new model denoted by DUET (Dual ET)which accounts for all thermoelectric effects in most modern devices and demonstrates very good numerical properties. The new advances in applicability and computational efficiency of the ET model, as well as its easy implementation by modifying the conventional drift-diffusion (DD) model, indicate its attractiveness for numerical simulation of advanced semiconductor devices

scholarly journals On a Drift–Diffusion System for Semiconductor Devices

2016 ◽  
Vol 17 (12) ◽  
pp. 3473-3498 ◽  
Author(s):  
Rafael Granero-Belinchón
Keyword(s):  
Semiconductor Devices ◽  
Diffusion System ◽  
Drift Diffusion
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