The effect of synthetic driving force on the atomic mechanisms associated with grain boundary motion below the interface roughening temperature

2014 ◽  
Vol 86 ◽  
pp. 38-42 ◽  
Author(s):  
Shawn P. Coleman ◽  
Douglas E. Spearot ◽  
Stephen M. Foiles
1994 ◽  
Vol 364 ◽  
Author(s):  
Rui Yang ◽  
Robert W. Cahn

AbstractAn experimental study by TEM was made of the morphology of the antiphase domains formed when heavily rolled Q13AU is annealed at a temperature slightly below the critical temperature for ordering, Tc. Domains are formed at the advancing grain boundary with extremely small size and grow as recrystallization proceeds. From an early stage, domain walls show a preference for (100) orientation. The key question is raised whether domain formation during recrystallization entails the presence of a disordered zone at a moving grain boundary near Tc, and the conclusion is that such a zone is probably present. A provisional theory is constructed for the genesis of domains during recrystallization, taking into account the dragging force which newly formed domains exert on a moving grain boundary thereby diminishing the effective driving force for grain boundary motion, and a critical domain size is estimated which should completely inhibit grain-boundary motion. The intriguing fact that no domains at all are formed during the recrystallization of strongly ordered intermetallics such as Ni3Al is briefly discussed and a reason is proposed.


2004 ◽  
Vol 467-470 ◽  
pp. 757-762
Author(s):  
V.A. Ivanov ◽  
Dmitri A. Molodov ◽  
Lasar S. Shvindlerman ◽  
Günter Gottstein

The motion of a curved grain boundary with a “surface triple junction” (“free surface – boundary - free surface”) in aluminum bicrystals is studied. The effect of the “surface triple junction” on grain boundary motion is discussed in the terms of the equilibrium of boundary and junction velocity. Boundary motion in samples with different boundary curvature revealed a strict proportionality of boundary velocity and driving force. This result corroborates the fact that in the entire investigated temperature range the “surface” triple junction does not affect the boundary motion.


2011 ◽  
Vol 65 (2) ◽  
pp. 151-154 ◽  
Author(s):  
M. Velasco ◽  
H. Van Swygenhoven ◽  
C. Brandl

1990 ◽  
Vol 183 ◽  
Author(s):  
J. L. Batstone

AbstractMotion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.


2020 ◽  
pp. 541-544
Author(s):  
J.L. Turner ◽  
M. Nakagawa ◽  
M.T. Lusk

2007 ◽  
Vol 550 ◽  
pp. 387-392
Author(s):  
Pavel Lejček

Anisotropy of grain boundary motion in a Fe–6at.%Si alloy is represented by a spectrum of values of the activation enthalpy of migration and the pre-exponential factor, depending on the orientation of individual grain boundaries. The general plot of these values exhibits a pronounced linear interdependence called the compensation effect. It is shown that changes of these values, caused by changes of intensive variables, are thermodynamically consistent.


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