scholarly journals Longitudinal inhomogeneity of DC current transport properties in Gd-system HTS tapes – Statistical approach for system design

Cryogenics ◽  
2014 ◽  
Vol 63 ◽  
pp. 17-24 ◽  
Author(s):  
T. Nakamura ◽  
Y. Takamura ◽  
N. Amemiya ◽  
K. Nakao ◽  
T. Izumi
Keyword(s):  
System Design ◽  
Transport Properties ◽  
Statistical Approach ◽  
Current Transport ◽  
Longitudinal Inhomogeneity ◽  
Dc Current

scholarly journals Longitudinal Inhomogeneity of DC Current Transport Properties in Gd-system HTS Tapes

2013 ◽  
Vol 48 (4) ◽  
pp. 178-186 ◽  
Author(s):  
Taketsune NAKAMURA ◽  
Yutaka TAKAMURA ◽  
Naoyuki AMEMIYA ◽  
Koichi NAKAO ◽  
Teruo IZUMI
Keyword(s):  
Transport Properties ◽  
Current Transport ◽  
Longitudinal Inhomogeneity ◽  
Dc Current

In-Field Current Transport Properties of 600 A-Class ${\rm GdBa}_{2}{\rm Cu}_{3}{\rm O}_{7-\delta}$ Coated Conductor Utilizing IBAD Template

2011 ◽  
Vol 21 (3) ◽  
pp. 3206-3209 ◽  
Author(s):  
Masayoshi Inoue ◽  
Rene Fuger ◽  
Kohei Higashikawa ◽  
Takanobu Kiss ◽  
Satoshi Awaji ◽  
...  
Keyword(s):  
Transport Properties ◽  
Coated Conductor ◽  
Current Transport

The Current Transport Properties of a 200 A-Class Bi-2223 Superconducting Wire at Various Temperatures and Magnetic Fields

2007 ◽  
Vol 17 (2) ◽  
pp. 3113-3116 ◽  
Author(s):  
N. Ayai ◽  
S. Kobayashi ◽  
K. Yamazaki ◽  
S. Yamade ◽  
M. Kikuchi ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Transport Properties ◽  
Current Transport ◽  
Superconducting Wire

Alternating-Current Transport Properties in Nd 0.7 Sr 0.3 MnO 3 Ceramic with Secondary Phases

2012 ◽  
Vol 29 (7) ◽  
pp. 077303
Author(s):  
Shun-Sheng Chen ◽  
Chang-Ping Yang ◽  
Xiao-Jing Luo ◽  
I V Medvedeva
Keyword(s):  
Transport Properties ◽  
Alternating Current ◽  
Current Transport ◽  
Secondary Phases

Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 811-814 ◽  
Author(s):  
Mariaconcetta Canino ◽  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Francesco Moscatelli ◽  
Roberta Nipoti ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Transport Properties ◽  
Current Transport ◽  
Step Bunching ◽  
Excess Current ◽  
Low Temperature Annealing ◽  
Current Voltage ◽  
P Type

This paper reports on the defects created in a 6H-SiC p-type substrate by a process of ion implantation and a quite low temperature annealing (1300 °C), suitable for the realization of the source/drain regions of a MOSFET because it does not give rise to step bunching phenomena. Current voltage measurements showed the presence of a group of diodes featured by excess current. The effects of defects under the implanted layer on the transport properties of the diodes were investigated by DLTS: four hole traps were detected in all the measured diodes; besides, a broadened peak around 550 K was detected in the diodes that show excess current.

Effect of ICP Etching on Current Transport Properties in High-voltage LED Array

2013 ◽  
Vol 34 (10) ◽  
pp. 1362-1366
Author(s):  
朱彦旭 ZHU Yan-xu ◽  
范玉宇 FAN Yu-yu ◽  
曹伟伟 CAO Wei-wei ◽  
邓叶 DENG Ye ◽  
刘建朋 LIU Jian-peng
Keyword(s):  
Transport Properties ◽  
High Voltage ◽  
Current Transport ◽  
Icp Etching ◽  
Led Array

Impact of Electrode Oxidation on the Current Transport Properties at Platinum/(Niobium-Doped Strontium-Titanate) Schottky Junctions

2014 ◽  
Vol 3 (7) ◽  
pp. P243-P248 ◽  
Author(s):  
Sakyo Hirose ◽  
Hideki Yoshikawa ◽  
Hiroshi Yanagi ◽  
Akira Ando ◽  
Shigenori Ueda ◽  
...  
Keyword(s):  
Transport Properties ◽  
Strontium Titanate ◽  
Current Transport ◽  
Niobium Doped ◽  
Schottky Junctions
Sign in / Sign up

Export Citation Format

Share Document