Structure and topographies of diamond-like carbon films produced on tungsten pre-implanted stainless steel substrate by plasma immersion ion implantation and deposition

2007 ◽  
Vol 16 (8) ◽  
pp. 1490-1499 ◽  
Author(s):  
Ming Xu ◽  
Jun Zhao ◽  
Xun Cai ◽  
Qiulong Chen ◽  
Paul K. Chu
1992 ◽  
Vol 7 (7) ◽  
pp. 1805-1808
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yoshimasa Yamaguchi

Hydrogenated amorphous carbon (a–C:H) films on stainless steel (AISI430) substrate oxidized in air at 1273 K were prepared from a gas mixture of methane and hydrogen by an rf plasma chemical vapor deposition, and thermally stimulated exoelectron emission (TSEE) was studied for the x-ray irradiated a–C:H films. Glow curves and energy distributions of TSEE from the 80- and 280-nm a–C:H films and from the AISI430 substrate have been measured under ultrahigh vacuum conditions. It was found that the glow curve from the 80-nm a–C:H film was similar to that from the AISI430 substrate, but it was quite different from that from the 280-nm film; the values of the mean energy of exoelectrons at the glow peak temperatures from the 80-nm a–C:H film are almost the same as those from the substrate but are much lower than those of the 280-nm film. The surfaces of 80- and 280-nm a–C:H films are observed with the scanning electron microscope (SEM). Observations by SEM show that the 80-nm film has relatively large-sized clusters of films and the stainless steel substrate still appears in some places, but the surface of the 280-nm film is completely covered by the carbon films. From these results, we propose that TSEE from the 80-nm film originates mainly from the oxide films on the stainless steel substrate and TSEE from the 280-nm film originates from the film itself. Thus, TSEE can be applied to characterize the surface of thin films.


2007 ◽  
Vol 515 (6) ◽  
pp. 3196-3201 ◽  
Author(s):  
Z.-H. Xie ◽  
R. Singh ◽  
A. Bendavid ◽  
P.J. Martin ◽  
P.R. Munroe ◽  
...  

2008 ◽  
Vol 17 (8) ◽  
pp. 3108-3114 ◽  
Author(s):  
Wang Jing ◽  
Liu Gui-Chang ◽  
Wang Li-Da ◽  
Deng Xin-Lü ◽  
Xu Jun

2008 ◽  
Vol 373-374 ◽  
pp. 151-154 ◽  
Author(s):  
Li Ji ◽  
Hong Xuan Li ◽  
Fei Zhao ◽  
Jian Min Chen ◽  
Hui Di Zhou

A silicon interlayer was introduced between the DLC films and 202 stainless steel substrate using a medium frequency magnetron sputtering. The adhesion was evaluated by the scratch tests and wear tests together. Two main parameters in the deposition process of Si interlayers, i.e. the sputtering current and pulse bias voltage, were optimized respectively, and the action mechanisms were discussed as well. Moreover, a special treatment with the purpose of forming a complete graded intermixed Si-Fe interface was designed to improve the adhesion strength further. DLC films with good adhesion strength were deposited on 202 stainless steel substrates using a silicon interlayer.


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