Study on the subsurface damage depth of monocrystalline silicon in ultrasonic vibration assisted diamond wire sawing

Author(s):  
Yan Wang ◽  
Bocheng Zhao ◽  
Shengju Huang ◽  
Zhaofeng Qian
2020 ◽  
Vol 23 (4) ◽  
Author(s):  
Erick Cardoso Costa ◽  
Caroline Piesanti dos Santos ◽  
Fabio Antonio Xavier ◽  
Walter Lindolfo Weingaertner

2019 ◽  
Vol 273 ◽  
pp. 116267 ◽  
Author(s):  
Huapan Xiao ◽  
Hairong Wang ◽  
Na Yu ◽  
Rongguang Liang ◽  
Zhe Tong ◽  
...  

2018 ◽  
Vol 57 (8S3) ◽  
pp. 08RB08 ◽  
Author(s):  
Halubai Sekhar ◽  
Tetsuo Fukuda ◽  
Katsuto Tanahashi ◽  
Katsuhiko Shirasawa ◽  
Hidetaka Takato ◽  
...  

Author(s):  
Erick Cardoso Costa ◽  
Caroline Piesanti dos Santos ◽  
Fabio Antonio Xavier ◽  
Walter Lindolfo Weingaertner

2020 ◽  
Vol 112 ◽  
pp. 105015 ◽  
Author(s):  
Liyuan Wang ◽  
Yufei Gao ◽  
Xinying Li ◽  
Tianzhao Pu ◽  
Youkang Yin

2015 ◽  
Vol 1770 ◽  
pp. 61-66 ◽  
Author(s):  
Bhushan Sopori ◽  
Srinivas Devayajanam ◽  
Prakash Basnyat ◽  
Rekha Schnepf ◽  
Santosh Sahoo ◽  
...  

ABSTRACTThis paper describes the characteristics of damage, introduced under different conditions of diamond wire sawing, on the Si wafer surfaces. The damage occurs in the form of frozen-in dislocations, phase changes, and microcracks. The in-depth damage was determined by conventional ways such as TEM, SEM and angle-polishing/defect-etching, which only provide local information. We have also applied a new technique based on sequential measurement of the minority carrier lifetime after etching thin layers from the surfaces to determine average damage depth and its in-depth distribution. The lateral spatial damage variations, which seem to be mainly related to wire reciprocation process, were observed by photoluminescence and lifetime mapping. Our results show a strong correlation of damage depth on the diamond grit size and wire usage.


Energies ◽  
2017 ◽  
Vol 10 (4) ◽  
pp. 414 ◽  
Author(s):  
Sindy Würzner ◽  
Martin Herms ◽  
Thomas Kaden ◽  
Hans Möller ◽  
Matthias Wagner

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