Experimental and simulation study of the high pressure oxidation of dimethyl carbonate

Fuel ◽  
2022 ◽  
Vol 309 ◽  
pp. 122154
Author(s):  
Katiuska Alexandrino ◽  
Ángela Millera ◽  
Rafael Bilbao ◽  
María U. Alzueta
1987 ◽  
Vol 105 ◽  
Author(s):  
E. C. Frey ◽  
N. R. Parikh ◽  
M. L. Swanson ◽  
M. Z. Numan ◽  
W. K. Chu

AbstractWe have studied oxidation of various Si samples including: Ge implanted Si, CVD and MBE grown Si(0.4–4% Ge) alloys, and MBE grown Si-Si(Ge) superlattices. The samples were oxidized in pyrogenic steam (800–1000°C, atmospheric pressure) and at low temperature and high pressure (740°C, 205 atm of dry O2). The oxidized samples were analyzed with RBS/channeling and ellipsometry.An enhanced oxidation rate was seen for all Ge doped samples, compared with rates for pure Si. The magnitude of the enhancement increased with decreasing oxidation temperature. For steam oxidations the Ge was segregated from the oxide and formed an epitaxial layer at the Si-SiO2 interface; the quality of the epitaxy was highest for the highest oxidation temperatures. For high pressure oxidation the Ge was trapped in the oxide and the greatest enhancement in oxidation rate (>100%) was observed.


2019 ◽  
Vol 37 (1) ◽  
pp. 469-476 ◽  
Author(s):  
Paul Marshall ◽  
Caroline Leung ◽  
Jorge Gimenez-Lopez ◽  
Christian T. Rasmussen ◽  
Hamid Hashemi ◽  
...  

1982 ◽  
Vol 11 (5) ◽  
pp. 919-929 ◽  
Author(s):  
M. Hirayama ◽  
H. Miyoshi ◽  
N. Tsubouchi ◽  
H. Abe

1998 ◽  
Vol 15 (1-2) ◽  
pp. 27-35
Author(s):  
K N Bhat ◽  
P R S Rao ◽  
J Vijayakumar ◽  
S Seetharaman ◽  
K Gopinath ◽  
...  

2019 ◽  
Vol 37 (1) ◽  
pp. 461-468 ◽  
Author(s):  
Hamid Hashemi ◽  
Jakob M. Christensen ◽  
Lawrence B. Harding ◽  
Stephen J. Klippenstein ◽  
Peter Glarborg

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