Thin oxide films of silicon by high pressure oxidation

1982 ◽  
Vol 11 (5) ◽  
pp. 919-929 ◽  
Author(s):  
M. Hirayama ◽  
H. Miyoshi ◽  
N. Tsubouchi ◽  
H. Abe
Keyword(s):  
High Pressure ◽  
Oxide Films ◽  
Pressure Oxidation ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
High Pressure Oxidation

High-Pressure Oxidation of Copper on Au(111)—A Route toward Bulk-like Cuprous Oxide Films

2020 ◽  
Vol 124 (52) ◽  
pp. 28605-28613
Author(s):  
Alexander Gloystein ◽  
Niklas Nilius
Keyword(s):  
High Pressure ◽  
Cuprous Oxide ◽  
Oxide Films ◽  
Pressure Oxidation ◽  
High Pressure Oxidation

Surface Potential Control on Thin Oxide Films with Respect to Electron Stimulated Desorption Studies

1995 ◽  
Vol 5 (9) ◽  
pp. 1407-1424 ◽  
Author(s):  
Marc Bernheim ◽  
Gilles Rousse
Keyword(s):  
Surface Potential ◽  
Oxide Films ◽  
Potential Control ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
Electron Stimulated Desorption

The Effect of Ge Segregation on Oxidation of Si

1987 ◽  
Vol 105 ◽  
Author(s):  
E. C. Frey ◽  
N. R. Parikh ◽  
M. L. Swanson ◽  
M. Z. Numan ◽  
W. K. Chu
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Epitaxial Layer ◽  
Atmospheric Pressure ◽  
Oxidation Rate ◽  
Oxidation Temperature ◽  
Pressure Oxidation ◽  
Enhanced Oxidation ◽  
High Pressure Oxidation

AbstractWe have studied oxidation of various Si samples including: Ge implanted Si, CVD and MBE grown Si(0.4–4% Ge) alloys, and MBE grown Si-Si(Ge) superlattices. The samples were oxidized in pyrogenic steam (800–1000°C, atmospheric pressure) and at low temperature and high pressure (740°C, 205 atm of dry O2). The oxidized samples were analyzed with RBS/channeling and ellipsometry.An enhanced oxidation rate was seen for all Ge doped samples, compared with rates for pure Si. The magnitude of the enhancement increased with decreasing oxidation temperature. For steam oxidations the Ge was segregated from the oxide and formed an epitaxial layer at the Si-SiO2 interface; the quality of the epitaxy was highest for the highest oxidation temperatures. For high pressure oxidation the Ge was trapped in the oxide and the greatest enhancement in oxidation rate (>100%) was observed.

Electron currents in thin oxide films on aluminium

Vacuum ◽  
1953 ◽  
Vol 3 (4) ◽  
pp. 449
Keyword(s):  
Oxide Films ◽  
Thin Oxide Films ◽  
Thin Oxide

X-Ray Diffraction of Thin Oxide Films on Soldered Module Pins

1989 ◽  
pp. 303-310
Author(s):  
T. Paul Adl ◽  
H. F. Stehmeyer
Keyword(s):  
Oxide Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thin Oxide Films ◽  
Thin Oxide

High Pressure Oxidation for Low Temperature Passivation of Si1-xGex Alloys

1993 ◽  
pp. 71-79
Author(s):  
C. Caragianis ◽  
Y. Shigesato ◽  
D. C. Paine
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Pressure Oxidation ◽  
High Pressure Oxidation

Conductance measurement of thin oxide films on a platinum anode

1977 ◽  
Vol 22 (2) ◽  
pp. 175-179 ◽  
Author(s):  
S. Shibata
Keyword(s):  
Oxide Films ◽  
Conductance Measurement ◽  
Platinum Anode ◽  
Thin Oxide Films ◽  
Thin Oxide
Sign in / Sign up

Export Citation Format

Share Document