Molecular dynamics studies of ultrafast laser-induced phase and structural change in crystalline silicon

2012 ◽  
Vol 55 (21-22) ◽  
pp. 6060-6066 ◽  
Author(s):  
Chengjuan Yang ◽  
Yaguo Wang ◽  
Xianfan Xu
2017 ◽  
Vol 1 (6) ◽  
Author(s):  
Alexander Miloshevsky ◽  
Mark C. Phillips ◽  
Sivanandan S. Harilal ◽  
Phillip Dressman ◽  
Gennady Miloshevsky

1995 ◽  
Vol 396 ◽  
Author(s):  
M. tang ◽  
L. colombo ◽  
T. Diaz De La Rubia

AbstractTight-binding molecular dynamics (TBMD) simulations are performed (i) to evaluate the formation and binding energies of point defects and defect clusters, (ii) to compute the diffusivity of self-interstitial and vacancy in crystalline silicon, and (iii) to characterize the diffusion path and mechanism at the atomistic level. In addition, the interaction between individual defects and their clustering is investigated.


2020 ◽  
Vol 108 (1-2) ◽  
pp. 413-426 ◽  
Author(s):  
Panagiotis Stavropoulos ◽  
Alexios Papacharalampopoulos ◽  
Lydia Athanasopoulou

2015 ◽  
Vol 17 (37) ◽  
pp. 23704-23710 ◽  
Author(s):  
Jingchao Zhang ◽  
Yang Hong ◽  
Zhen Tong ◽  
Zhihuai Xiao ◽  
Hua Bao ◽  
...  

For the first time, the interfacial thermal resistance between silicene and multiple substrates,i.e., crystalline silicon and silica, amorphous silicon and silica are calculated using a transient heating molecular dynamics technique.


1998 ◽  
Vol 41 (4) ◽  
pp. 481-487 ◽  
Author(s):  
Tomio IWASAKI ◽  
Naoya SASAKI ◽  
Hiroshi MORIYA ◽  
Hideo MIURA ◽  
Norio ISHITSUKA

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