In-situ thermal conductivity of a sorption composite: An analytical approach

Author(s):  
A. Shafiepour ◽  
C. McCague ◽  
M. Bahrami
AIP Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 065015
Author(s):  
Fu Yi ◽  
Xupeng Qi ◽  
Xuexin Zheng ◽  
Huize Yu ◽  
Wenming Bai ◽  
...  

Polymer ◽  
2021 ◽  
pp. 123726
Author(s):  
Hajime Kishi ◽  
Takashi Saruwatari ◽  
Takemasa Mototsuka ◽  
Sanae Tanaka ◽  
Takeshi Kakibe ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
S. Ghadami ◽  
E. Taheri-Nassaj ◽  
H. R. Baharvandi ◽  
F. Ghadami

AbstractHfB2, Si, and activated carbon powders were selected to fabricate 0–30 vol% SiC reinforced HfB2-based composite. Pressureless sintering process was performed at 2050 °C for 4 h under a vacuum atmosphere. Microstructural studies revealed that in situ SiC reinforcement was formed and distributed in the composite according to the following reaction: Si + C = SiC. A maximum relative density of 98% was measured for the 20 vol% SiC containing HfB2 composite. Mechanical investigations showed that the hardness and the fracture toughness of these composites were increased and reached up to 21.2 GPa for HfB2-30 vol% SiC and 4.9 MPa.m1/2 for HfB2-20 vol% SiC, respectively. Results showed that alpha-SiC reinforcements were created jagged, irregular, and elongated in shape which were in situ formed between HfB2 grains and filled the porosities. Formation of alpha-SiC contributed to improving the relative density and mechanical properties of the composite samples. By increasing SiC content, an enhanced trend of thermal conductivity was observed as well as a reduced trend for electrical conductivity.


Author(s):  
Dezhi Zhang ◽  
Yingru Li ◽  
Zhenliang Yang ◽  
Bingqing Li ◽  
Zhiyi Wang ◽  
...  
Keyword(s):  

2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.


RSC Advances ◽  
2020 ◽  
Vol 10 (23) ◽  
pp. 13517-13524
Author(s):  
Chunbo Wang ◽  
Bing Cong ◽  
Junyu Zhao ◽  
Xiaogang Zhao ◽  
Daming Wang ◽  
...  

In situ synthesis of MWCNT-graft-polyimides enhanced thermal conductivity at a relatively low loading.


2015 ◽  
Author(s):  
Mohammad J. Modarres-Zadeh ◽  
Nahida Akhter ◽  
Ronald Hellmer ◽  
Michael Aragon ◽  
Reza Abdolvand

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