Modeling of a millimeter wave planar Schottky diode using both improved equivalent circuit model and 3D-EM model

Optik ◽  
2014 ◽  
Vol 125 (13) ◽  
pp. 3324-3327 ◽  
Author(s):  
Li Li ◽  
Yong Zhang ◽  
Wei Zhao ◽  
Shuang Liu ◽  
Ruimin Xu
Keyword(s):  
Equivalent Circuit ◽  
Millimeter Wave ◽  
Schottky Diode ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
3D Em

Analysis and Equivalent-Circuit Model for CMOS On-Chip Multiple Coupled Inductors in the Millimeter-Wave Region

2015 ◽  
Vol 62 (12) ◽  
pp. 3957-3964 ◽  
Author(s):  
Zongzhi Gao ◽  
Kai Kang ◽  
Zhengdong Jiang ◽  
Yunqiu Wu ◽  
Chenxi Zhao ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Millimeter Wave ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Coupled Inductors ◽  
Wave Region ◽  
On Chip

Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE

2007 ◽  
Vol 7 (11) ◽  
pp. 4089-4093
Author(s):  
Sehan Lee ◽  
Yunseop Yu ◽  
Sungwoo Hwang ◽  
Doyeol Ahn
Keyword(s):  
Equivalent Circuit ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Equivalent Circuit Model ◽  
Thermionic Emission ◽  
Metal Structure ◽  
Circuit Model ◽  
Semiconductor Nanowire ◽  
Circuit Simulator ◽  
Thermionic Field Emission

An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.

Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE

2007 ◽  
Vol 7 (11) ◽  
pp. 4089-4093 ◽  
Author(s):  
Sehan Lee ◽  
Yunseop Yu ◽  
Sungwoo Hwang ◽  
Doyeol Ahn
Keyword(s):  
Equivalent Circuit ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Equivalent Circuit Model ◽  
Thermionic Emission ◽  
Metal Structure ◽  
Circuit Model ◽  
Semiconductor Nanowire ◽  
Circuit Simulator ◽  
Thermionic Field Emission

An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.

scholarly journals Equivalent circuit model of millimeter-wave AlGaN/GaN HEMTs

2014 ◽  
Vol 11 (17) ◽  
pp. 20140613-20140613 ◽  
Author(s):  
Luo Xiaobin ◽  
Yu Weihua ◽  
Lv Xin ◽  
Lv Yuanjie ◽  
Dun Shaobo ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Millimeter Wave ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Gan Hemts
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