Study on the sensitivity decrease of reflection-mode GaN NEA photocathode

Optik ◽  
2014 ◽  
Vol 125 (20) ◽  
pp. 6040-6043
Author(s):  
Jiangtao Fu ◽  
Guoqiang Zheng ◽  
Songchun Zhang ◽  
Huahong Ma
Keyword(s):  
Reflection Mode ◽  
Sensitivity Decrease

An improved design for an Scanning Tunnelling Microscope (STM) for use in a Transmission Electron Microscope (TEM)

1991 ◽  
Vol 49 ◽  
pp. 384-385
Author(s):  
W.K. Lo ◽  
J.C.H. Spence
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Mechanical Stability ◽  
Scanning Tunnelling Microscope ◽  
Reflection Mode ◽  
Specimen Holder ◽  
Transmission Electron ◽  
Scanning Tunnelling ◽  
Improved Design

An improved design for a combination Scanning Tunnelling Microscope/TEM specimen holder is presented. It is based on earlier versions which have been used to test the usefulness of such a device. As with the earlier versions, this holder is meant to replace the standard double-tilt specimen holder of an unmodified Philips 400T TEM. It allows the sample to be imaged simultaneously by both the STM and the TEM when the TEM is operated in the reflection mode (see figure 1).The resolution of a STM is determined by its tip radii as well as its stability. This places strict limitations on the mechanical stability of the tip with respect to the sample. In this STM the piezoelectric tube scanner is rigidly mounted inside the endcap of the STM holder. The tip coarse approach to the sample (z-direction) is provided by an Inchworm which is located outside the TEM vacuum.

A size reduced reflection-mode phase shifter

2005 ◽  
Vol 47 (5) ◽  
pp. 457-459 ◽  
Author(s):  
Kae-Oh Sun ◽  
Chih-Chuan Yen ◽  
Daniel van der Weide
Keyword(s):  
Phase Shifter ◽  
Reflection Mode

The Characterization of Defects in Silicon Carbide Crystals by X-Ray Topography in the Back-Reflection Geometry

2004 ◽  
Vol 230-232 ◽  
pp. 1-16 ◽  
Author(s):  
William M. Vetter
Keyword(s):  
Silicon Carbide ◽  
Computer Algorithms ◽  
Reflection Mode ◽  
X Ray ◽  
Back Reflection ◽  
Device Structures ◽  
Reflection Geometry ◽  
Grade Silicon ◽  
Favorable Conditions

Synchrotron white-beam x-ray topographs taken in the back-reflection mode have proved a powerful tool in the study of defects in semiconductor-grade silicon carbide crystals. Capable of mapping the distribution of axial dislocations across a wafer's area (notably the devastating micropipe defect), it can also provide information on their natures. Under favorable conditions, various other types of defect may be observed in back-reflection topographs of SiC, among which are subgrain boundaries, inclusions, and basal plane dislocations. Observed defect images in backreflection topographs may be simulated using relatively simple computer algorithms based on ray tracing. It has been possible to use back-reflection topographs of SiC substrates with device structures deposited upon them to relate the incidence of defects to device failure.

scholarly journals Reflection-mode in vivo photoacoustic microscopy with subwavelength lateral resolution

2014 ◽  
Vol 5 (12) ◽  
pp. 4235 ◽  
Author(s):  
Wei Song ◽  
Wei Zheng ◽  
Ruimin Liu ◽  
Riqiang Lin ◽  
Hongtao Huang ◽  
...  
Keyword(s):  
Lateral Resolution ◽  
Photoacoustic Microscopy ◽  
Reflection Mode

scholarly journals Mid and Near-Infrared Reflection Spectral Database of Natural Organic Materials in the Cultural Heritage Field

2018 ◽  
Vol 2018 ◽  
pp. 1-16 ◽  
Author(s):  
Claudia Invernizzi ◽  
Tommaso Rovetta ◽  
Maurizio Licchelli ◽  
Marco Malagodi
Keyword(s):  
Near Infrared ◽  
Organic Materials ◽  
Protective Coatings ◽  
Total Reflection ◽  
Reflection Mode ◽  
Novel Approach ◽  
Infrared Reflection ◽  
Detailed Interpretation ◽  
Materials Used ◽  
Spectral Database

This study presents mid and near-infrared (7500-375 cm−1) total reflection mode spectra of several natural organic materials used in artworks as binding media, consolidants, adhesives, or protective coatings. A novel approach to describe and interpret reflectance bands as well as calculated absorbance after Kramers-Kronig transformation (KKT) is proposed. Transflection mode spectra have represented a valuable support both to study the distorted reflectance bands and to validate the applicability and usefulness of the KK correction. The aim of this paper is to make available to scientists and conservators a comprehensive infrared reflection spectral database, together with its detailed interpretation, as a tool for the noninvasive identification of proteins, lipids, polysaccharides, and resins by means of portable noncontact FTIR spectrometers.

Affection of different doping structure on quantum efficiency and spectrum response of reflection-mode GaN photocathode

Optik ◽  
2013 ◽  
Vol 124 (19) ◽  
pp. 3804-3805
Author(s):  
Jiangtao Fu ◽  
Guoqiang Zheng ◽  
Lipeng Zhou ◽  
Huahong Ma
Keyword(s):  
Quantum Efficiency ◽  
Reflection Mode ◽  
Spectrum Response
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