Role of a-Si:H buffer layer at the p/i interface and band gap profiling of the absorption layer on enhancing cell parameters in hydrogenated amorphous silicon germanium solar cells

Optik ◽  
2017 ◽  
Vol 136 ◽  
pp. 507-512 ◽  
Author(s):  
Duy Phong Pham ◽  
Sangho Kim ◽  
Jinjoo Park ◽  
Jaehyun Cho ◽  
HyunSung Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Buffer Layer ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Cell Parameters ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon–germanium thin films with a narrow band gap for silicon-based solar cells

2011 ◽  
Vol 11 (1) ◽  
pp. S50-S53 ◽  
Author(s):  
Chao-Chun Wang ◽  
Chueh-Yang Liu ◽  
Shui-Yang Lien ◽  
Ko-Wei Weng ◽  
Jung-Jie Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Narrow Band ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Based ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon germanium by Hot Wire CVD as an alternative for microcrystalline silicon in tandem and triple junction solar cells

2014 ◽  
Vol 1666 ◽  
Author(s):  
L.W. Veldhuizen ◽  
Y. Kuang ◽  
N.J. Bakker ◽  
C.H.M. van der Werf ◽  
S.-J. Yun ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Short Circuit ◽  
Hydrogenated Amorphous Silicon ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

ABSTRACTWe study hydrogenated amorphous silicon germanium (a-SiGe:H) deposited by HWCVD for the use as low band gap absorber in multijunction junction solar cells. We deposited layers with Tauc optical band gaps of 1.21 to 1.56 eV and studied the hydrogen bonding with FTIR for layers that were deposited at several reaction pressures. For our reaction conditions, we found an optimal reaction pressure of 38 µbar. The material that is obtained under these conditions does not meet all device quality requirements for a-SiGe:H, which is, as we hypothesize, caused by the presence of He that is used to dilute the GeH4 source gas. We present an initial single junction n-i-p solar cell with a Tauc optical band gap of 1.45 eV and a short circuit current density of 18.7 mA/cm2.

The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

2016 ◽  
Vol 62 ◽  
pp. 626-631 ◽  
Author(s):  
Jaran Sritharathikhun ◽  
Sorapong Inthisang ◽  
Taweewat Krajangsang ◽  
Patipan Krudtad ◽  
Suttinan Jaroensathainchok ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Silicon Oxide ◽  
Hydrogenated Amorphous Silicon ◽  
Single Junction ◽  
Amorphous Silicon Oxide ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Graded Layer Modification for High Efficiency Hydrogenated Amorphous Silicon–Germanium Solar Cells

2012 ◽  
Vol 51 ◽  
pp. 10NB16 ◽  
Author(s):  
Jin-Won Chung ◽  
Jun Woong Park ◽  
Yu Jin Lee ◽  
Seh-Won Ahn ◽  
Heon-Min Lee ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
High Efficiency ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Film Property Control of Hydrogenated Amorphous Silicon Germanium for Solar Cells

1993 ◽  
Vol 32 (Part 1, No. 11A) ◽  
pp. 4894-4899 ◽  
Author(s):  
Akira Terakawa ◽  
Masaki Shima ◽  
Katsunobu Sayama ◽  
Hisaki Tarui ◽  
Shinya Tsuda ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Film Property ◽  
Property Control ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous
Sign in / Sign up

Export Citation Format

Share Document