Structural and optical properties of ZnO co-doped with Co and Ni thin films deposited by pulse laser deposition technique

This paper reports the effect of Mg doping on structural and optical properties of ZnO prepared by pulse laser deposition (PLD). The films deposited on glass substrate using Nd:YAG laser (1064 nm) as the light source. The structure and optical properties were characterized by X-ray diffraction (XRD) and transmittance measurements. The films grown have a polycrystalline wurtzite structure and high transmission in the UV-Vis (300-900) nm. The optical energy gap of ZnO:Mg thin films could be controlled between (3.2eV and 3.9eV). The refractive index of ZnO:Mg thin films decreases with Mg doping. The extinction coefficient and the complex dielectric constant were also investigate.

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STRUCTURAL AND ELECTRICAL PROPERTIES OF (CDO)1-X (V2O5)X PREPARED BY PULSE LASER DEPOSITION TECHNIQUE FOR SOLAR CELL APPLICATIONS

MINAR International Journal of Applied Sciences and Technology ◽

10.47832/2717-8234.2-3.20 ◽

2021 ◽

Vol 03 (02) ◽

pp. 156-164

Author(s):

Asmaa Natiq Mohammed ALI ◽

Lamia K ABBAS ◽

Ihab Abbas TAHER

Keyword(s):

Thin Films ◽

Solar Cell ◽

Pulse Laser Deposition ◽

Pulse Laser ◽

Target Surface ◽

Laser Pulses ◽

Xrd Analysis ◽

Laser Deposition ◽

Pulse Laser Deposition Technique ◽

Deposition Technique

In this work ,pure and doped(CdO)thin films with different concentration of V2O5x (0.0, 0.05, 0.1 ) wt.% have been prepared on glass substrate at room temperature using Pulse Laser Deposition technique(PLD).The focused Nd:YAG laser beam at 800 mJ with a frequency second radiation at 1064 nm (pulse width 9 ns) repetition frequency (6 Hz), for 500 laser pulses incident on the target surface At first ,The pellets of (CdO)1-x(V2O5)x at different V2O5 contents were sintered to a temperature of 773K for one hours.Then films of (CdO)1-x(V2O5)x have been prepared.The structure of the thin films was examined by using (XRD) analysis..Hall effect has been measured in orded to know the type of conductivity, Finally the solar cell and the efficiency of the CdO:V2O5 cells have been studied.

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Effect of Annealing Temperature on the Optical Properties of TiO2 Thin Films Prepared by Pulse Laser Deposition

International Letters of Chemistry Physics and Astronomy ◽

10.18052/www.scipress.com/ilcpa.56.63 ◽

2015 ◽

Vol 56 ◽

pp. 63-70 ◽

Cited By ~ 4

Author(s):

Kadhim A. Aadim ◽

Khalid Haneen Abass ◽

Qunoot M. Hadi

Keyword(s):

Thin Films ◽

Optical Properties ◽

Pulse Laser Deposition ◽

Pulse Laser ◽

Annealing Temperature ◽

Energy Gap ◽

Dielectric Constants ◽

Laser Deposition ◽

Pulse Laser Deposition Technique ◽

Wide Range

TiO2 thin films were prepared by pulse laser deposition technique on glass substrates with laser power 700 mJ and 900 shot at distance 1cm under vacuum of 10-2 mbar with different annealing temperature (273, 373, 423)K. The influences of the annealing temperature on the optical properties of TiO2 thin films were mainly investigated. TiO2 is a wide band gap n-type semi-conductor that has a wide range of applications. It was found that the optical properties of TiO2 thin films were dependent on the annealing temperature. The values of optical energy gap decreases from (3.4 to 3.2) eV when increasing annealing temperature. The optical constants such as refractive index, extinction coefficient, real and imaginary dielectric constants as a function of wavelength were determined.

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