Characterization of transparent conducting CuI thin films prepared by pulse laser deposition technique

In this work ,pure and doped(CdO)thin films with different concentration of V2O5x (0.0, 0.05, 0.1 ) wt.% have been prepared on glass substrate at room temperature using Pulse Laser Deposition technique(PLD).The focused Nd:YAG laser beam at 800 mJ with a frequency second radiation at 1064 nm (pulse width 9 ns) repetition frequency (6 Hz), for 500 laser pulses incident on the target surface At first ,The pellets of (CdO)1-x(V2O5)x at different V2O5 contents were sintered to a temperature of 773K for one hours.Then films of (CdO)1-x(V2O5)x have been prepared.The structure of the thin films was examined by using (XRD) analysis..Hall effect has been measured in orded to know the type of conductivity, Finally the solar cell and the efficiency of the CdO:V2O5 cells have been studied.

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Characterization of hydroxyapatite coating by pulse laser deposition technique on stainless steel 316 L by varying laser energy

Applied Surface Science ◽

10.1016/j.apsusc.2012.10.072 ◽

2013 ◽

Vol 265 ◽

pp. 30-35 ◽

Cited By ~ 44

Author(s):

Himanshu Khandelwal ◽

Gurbhinder Singh ◽

Khelendra Agrawal ◽

Satya Prakash ◽

R.D. Agarwal

Keyword(s):

Stainless Steel ◽

Pulse Laser Deposition ◽

Pulse Laser ◽

Laser Energy ◽

Laser Deposition ◽

Hydroxyapatite Coating ◽

Pulse Laser Deposition Technique ◽

Deposition Technique ◽

Stainless Steel 316

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Photoswitching Characteristics of LiNbO3/ZnO/n-Si Heterojunction

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.655.186 ◽

2015 ◽

Vol 655 ◽

pp. 186-190

Author(s):

Yun Jie Liu ◽

Lan Zhong Hao ◽

Jun Zhu ◽

Wan Li Zhang ◽

Lian Qing Yu ◽

...

Keyword(s):

Pulse Laser Deposition ◽

Pulse Laser ◽

White Light ◽

High Performance ◽

Laser Deposition ◽

Pulse Laser Deposition Technique ◽

Deposition Technique ◽

Ferroelectric Films ◽

Si Substrates

(001)-oriented LiNbO3(LN) ferroelectric films were grown on (100)-oriented n-type Si substrates using 15 nm-thick ZnO layers as buffers by pulse laser deposition technique and the LN/ZnO/n-Si heterojunctions were fabricated. Obvious photoswitching characteristics to white light were observed when the reverse voltages were applied on the LN/ZnO/n-Si heterojunction. High performance was exhibited, such as a largeON/OFFratio, short photoresponse time, steadyONorOFFstates, and well reversible. The results were discussed in terms of the band diagrams of the LN/ZnO/Si heterojunctions in this work.

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Enhanced energy storage density in Sc3+ substituted Pb(Zr0.53Ti0.47)O3 nanoscale films by pulse laser deposition technique

Applied Surface Science ◽

10.1016/j.apsusc.2019.05.357 ◽

2019 ◽

Vol 490 ◽

pp. 451-459 ◽

Cited By ~ 7

Author(s):

Mohan K. Bhattarai ◽

Karuna K. Mishra ◽

Alvaro A. Instan ◽

Bishnu P. Bastakoti ◽

Ram S. Katiyar

Keyword(s):

Energy Storage ◽

Pulse Laser Deposition ◽

Pulse Laser ◽

Laser Deposition ◽

Pulse Laser Deposition Technique ◽

Energy Storage Density ◽

Deposition Technique ◽

Storage Density ◽

Nanoscale Films

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Preparation and characterization of epitaxial La0.65Sr0.35MnOz thin films grown by pulse laser deposition

Materials Letters ◽

10.1016/0167-577x(96)80006-1 ◽

1996 ◽

Vol 27 (4-5) ◽

pp. 139-143 ◽

Cited By ~ 3

Author(s):

Yan-Feng Chen ◽

Li Sun ◽

Yi Pan ◽

Yu Tao ◽

Zhi-Guo Liu ◽

...

Keyword(s):

Thin Films ◽

Pulse Laser Deposition ◽

Pulse Laser ◽

Laser Deposition

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Tribological properties of nanostructured TiC coatings deposited on steel and silicon substrates using pulse laser deposition technique

Tribology - Materials Surfaces & Interfaces ◽

10.1179/1751584x10y.0000000006 ◽

2011 ◽

Vol 5 (1) ◽

pp. 1-9 ◽

Cited By ~ 3

Author(s):

N Kumar ◽

R Krishnan ◽

D Dinesh Kumar ◽

S Dash ◽

A K Tyagi

Keyword(s):

Pulse Laser Deposition ◽

Pulse Laser ◽

Tribological Properties ◽

Laser Deposition ◽

Pulse Laser Deposition Technique ◽

Silicon Substrates ◽

Deposition Technique

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Comparative studies on BaZrxTi1-xO3 thin films deposited by Sol-gel and Pulse laser deposition

MRS Proceedings ◽

10.1557/proc-784-c8.18 ◽

2003 ◽

Vol 784 ◽

Author(s):

A. Dixit ◽

P. Bhattacharaya ◽

S. B. Majumder ◽

R. S. Katiyar ◽

A. S. Bhalla

Keyword(s):

Thin Films ◽

Pulse Laser Deposition ◽

Pulse Laser ◽

Sol Gel ◽

Laser Deposition ◽

Pulse Laser Deposition Technique ◽

X Ray Diffraction ◽

X Ray ◽

Si Substrates ◽

Capacitance Voltage

ABSTRACTFerroelectric thin films of BaZrxTi1-xO3 (BZT) were deposited on platinum (Pt) and platinized silicon (Pt/Si) substrates by sol-gel and pulse laser deposition technique respectively. The structure and preferred orientation of the films were examined by x-ray diffraction measurements. The phase formation of sol-gel derived BZT films were found to be at high temperature (1100°C) compare to the pulse laser deposited BZT films ∼ 700°C. Polycrystalline films were observed by both techniques. Ferroelectric nature of the films was confirmed by hysteresis and capacitance-voltage characteristics using platinum top electrodes. Dielectric constant as well as loss was found to decrease by increasing Zr contents. Surface morphology predicted smooth crack free surface.

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