The electron-related optical responses for the square tangent quantum well: Role of applied external fields

ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.

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Low-coherence photonic method of electrochemical processes monitoring

Scientific Reports ◽

10.1038/s41598-021-91883-z ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Monika Kosowska ◽

Paweł Jakóbczyk ◽

Michał Rycewicz ◽

Alex Vitkin ◽

Małgorzata Szczerska

Keyword(s):

Electrochemical Process ◽

Electrochemical Measurements ◽

Boron Doped Diamond ◽

Silica Substrate ◽

Low Coherence ◽

Optical Responses ◽

Boron Doped ◽

Fabry Perot ◽

Hybrid Characterization

AbstractWe present an advanced multimodality characterization platform for simultaneous optical and electrochemical measurements of ferrocyanides. Specifically, we combined a fiber-optic Fabry–Perot interferometer with a three-electrode electrochemical setup to demonstrate a proof-of-principle of this hybrid characterization approach, and obtained feasibility data in its monitoring of electrochemical reactions in a boron-doped diamond film deposited on a silica substrate. The film plays the dual role of being the working electrode in the electrochemical reaction, as well as affording the reflectivity to enable the optical interferometry measurements. Optical responses during the redox reactions of the electrochemical process are presented. This work proves that simultaneous opto-electrochemical measurements of liquids are possible.

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The role of Rashba spin-orbit interaction and external fields in the thermal properties of a doped quantum dot with Gaussian impurity

Physica B Condensed Matter ◽

10.1016/j.physb.2020.412259 ◽

2020 ◽

Vol 593 ◽

pp. 412259

Author(s):

P. Hosseinpour

Keyword(s):

Thermal Properties ◽

Quantum Dot ◽

Orbit Interaction ◽

Spin Orbit ◽

External Fields ◽

Spin Orbit Interaction ◽

Rashba Spin

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C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

MRS Proceedings ◽

10.1557/proc-300-115 ◽

1993 ◽

Vol 300 ◽

Author(s):

S. Subramanian ◽

B. M. Arora ◽

A. K. Srivastava ◽

S. Banerjee ◽

G. Fernandes

Keyword(s):

Quantum Well ◽

Band Offset ◽

Full Width ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Structures ◽

Strained Quantum Well ◽

Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

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