Structural, electronic and optical properties of transition metal doped Hf1-xTMxO2 (TM = Co, Ni and Zn) using modified TB-mBJ potential for optoelectronic memristors devices
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2016 ◽
Vol 231-232
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pp. 68-79
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2017 ◽
Vol 19
(29)
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pp. 19050-19057
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