Study of dislocations in HgCdTe epilayers at (111)B and (110) surfaces using modified defect etchant

2015 ◽  
Vol 71 ◽  
pp. 378-383 ◽  
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Radheshyam Nokhwal ◽  
Raghvendra Sahai Saxena ◽  
B.L. Sharma ◽  
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S.A. Hashmi ◽  
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Hgcdte Epilayers

Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma

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T. D. Golding ◽  
R. Hellmer ◽  
L. Bubulac ◽  
J. H. Dinan ◽  
L. Wang ◽  
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Glow Discharge ◽  
Discharge Plasma ◽  
Glow Discharge Plasma ◽  
Si Substrates ◽  
Hgcdte Epilayers

High quality HgCdTe epilayers grown on (211)B GaAs by molecular beam epitaxy

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Vol 152 (4) ◽  
pp. 261-265 ◽  
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S.D. Chen ◽  
L. Lin ◽  
X.Z. He ◽  
M.J. Ying ◽  
R.Q. Wu
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Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
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Photoluminescence studies of HgCdTe epilayers

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Vol 7 (6) ◽  
pp. 1615-1617
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I. C. Robin ◽  
M. Taupin ◽  
R. Derone ◽  
A. Solignac ◽  
P. Ballet ◽  
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Photoluminescence Studies ◽  
Hgcdte Epilayers

Variable-Field Hall Effect Analysis of HgCdTe Epilayers with Very Low Doping Density

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Vol 46 (9) ◽  
pp. 5479-5483 ◽  
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Justin Easley ◽  
Erdem Arkun ◽  
Michael Carmody ◽  
Jamie Phillips
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Hall Effect ◽  
Doping Density ◽  
Effect Analysis ◽  
Variable Field ◽  
Hgcdte Epilayers

Composition characterization methods for HgCdTe epilayers grown by molecular beam epitaxy

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Vol 117 (1-4) ◽  
pp. 193-196 ◽  
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N. Oda ◽  
T. Kanno ◽  
M. Saga ◽  
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Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Characterization Methods ◽  
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Lattice mismatch induced morphological features and strain in HgCdTe epilayers on CdZnTe substrates

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Vol 26 (6) ◽  
pp. 515-523 ◽  
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Sanghamitra Sen ◽  
Jeffrey M. Peterson ◽  
Hua Chung ◽  
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Lattice Mismatch ◽  
Morphological Features ◽  
Hgcdte Epilayers ◽  
Cdznte Substrates

Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations

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Vol 312 (9) ◽  
pp. 1481-1485
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U. Gilabert ◽  
E. Moyano ◽  
A. Scarpettini ◽  
A.B. Trigubó
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Growth Kinetics ◽  
Hgcdte Epilayers ◽  
Kinetics Of
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