Effect of copper concentration and spray rate on the properties Cu2ZnSnS4 thin films deposited using spray pyrolysis

Vanadium oxide thin films were grown on glass substrates using spray pyrolysis technique. The effects of substrate temperature, vanadium concentration in the initial solution and the solution spray rate on the nanostructural and the electrochromic properties of deposited films are investigated. Characterization and the electrochromic measurements were carried out using X-ray diffraction, scanning electron microscopy and cyclic voltammogram. XRD patterns showed that the prepared films have polycrystalline structure and are mostly mixed phases of orthorhombic α- V 2 O 5 along with minor β- V 2 O 5 and V 4 O 9 tetragonal structures. The preferred orientation of the deposited films was found to be along [101] plane. The cyclic voltammogram results obtained for different samples showed that only the films with 0.2 M solution concentration, 5 ml/min solution spray rate and 450°C substrate temperature exhibit two-step electrochromic properties. The results show a correlation between cycle voltammogram, morphology and resistance of the films.

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The effect of copper concentration on structural, optical and dielectric properties of CuxZn1−xS thin films

Optics Communications ◽

10.1016/j.optcom.2011.10.062 ◽

2012 ◽

Vol 285 (6) ◽

pp. 1215-1220 ◽

Cited By ~ 27

Author(s):

M. Ali Yıldırım

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Copper Concentration ◽

Effect Of Copper

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The growth of manganese oxide thin films by spray pyrolysis technique

International Journal of Scientific Research ◽

10.15373/22778179/jul2012/56 ◽

2012 ◽

Vol 1 (2) ◽

pp. 159-161

Author(s):

M.Sudha M.Sudha ◽

◽

P.Duraisamy P.Duraisamy

Keyword(s):

Thin Films ◽

Manganese Oxide ◽

Spray Pyrolysis ◽

Spray Pyrolysis Technique ◽

Oxide Thin Films

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Electron beam induced effects in Cu/GeSe2amorphous films

MRS Proceedings ◽

10.1557/proc-777-t4.7 ◽

2003 ◽

Vol 777 ◽

Author(s):

J.S. Romero ◽

A.G. Fitzgerald

Keyword(s):

Thin Films ◽

Electron Beam ◽

Simple Model ◽

Copper Concentration ◽

Negative Charge ◽

Electron Bombardment ◽

Continuous Operation ◽

Electron Radiation ◽

Crystalline Product ◽

Intense Electron

AbstractCopper migration is observed in the SEM in amorphous GeSe2/Cu thin films when an electron beam is focused in pulsed or continuous operation on the surface of these thin films. The phenomenon can be explained using a simple model in which the population of D- centers is considered to increase upon electron irradiation. The increase in the D- center population is envisaged as due to the breaking of bonds by the electron radiation and by the constant presence of negative charge in irradiated regions. Changes in copper concentration of 20%-30% have been obtained. Additionally we have observed the local crystallization of amorphous GeSe2/Cu thin films in the TEM when the samples were subjected to intense electron bombardment. The crystalline product has been identified as Berzelianite (Cu2Se).

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