Determination of trapping center parameters of Tl2InGaS4-layered crystals by thermally stimulated current measurements

2006 ◽  
Vol 417 (1-2) ◽  
pp. 23-28 ◽  
Author(s):  
Nader A.P. Mogaddam ◽  
N.S. Yuksek ◽  
N.M. Gasanly ◽  
H. Ozkan
Keyword(s):  
Trapping Center ◽  
Thermally Stimulated Current ◽  
Layered Crystals

DETERMINATION OF TRAPPING CENTER PARAMETERS OF Tl2Ga2S3Se LAYERED CRYSTALS BY THERMALLY STIMULATED CURRENT MEASUREMENTS

2010 ◽  
Vol 24 (14) ◽  
pp. 2149-2161 ◽  
Author(s):  
T. YILDIRIM ◽  
H. A. NASSER ◽  
N. M. GASANLY
Keyword(s):  
Cross Section ◽  
Trapping Center ◽  
Heating Rates ◽  
Thermally Stimulated Current ◽  
A Value ◽  
Initial Rise ◽  
Layered Crystals ◽  
Light Excitation ◽  
Good Agreement

We have carried out thermally stimulated current (TSC) measurements on as-grown Tl 2 Ga 2 S 3 Se layered single crystals in the temperature range 10–60 K with different heating rates of 0.6–1.5 K s1. The data were analyzed by curve fitting, initial rise, and peak shape methods. The results were in good agreement with each other. Experimental evidence was obtained for trapping center in Tl 2 Ga 2 S 3 Se crystal with activation energy of 11 meV. The capture cross section and concentration of the traps were found to be 1.5 × 10-23 cm 2 and 1.44 × 1010 cm -3, respectively. Analysis of the TSC data at different light excitation temperatures leads to a value of 18meV/decade for the traps distribution.

Trapping center parameters of TlGaSe2 layered crystals

2004 ◽  
Vol 344 (1-4) ◽  
pp. 249-254 ◽  
Author(s):  
N.S. Yuksek ◽  
H. Kavas ◽  
N.M. Gasanly ◽  
H. Ozkan
Keyword(s):  
Trapping Center ◽  
Layered Crystals
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