Effects of post-deposition annealing ambient on chemical, structural, and electrical properties of RF magnetron sputtered Y2O3 gate on gallium nitride

2013 ◽  
Vol 575 ◽  
pp. 382-392 ◽  
Author(s):  
Hock Jin Quah ◽  
Kuan Yew Cheong
Keyword(s):  
Gallium Nitride ◽  
Electrical Properties ◽  
Post Deposition Annealing ◽  
Structural And Electrical Properties ◽  
Post Deposition

EFFECT OF POST-DEPOSITION ANNEALING IN FORMING GAS ON STRUCTURAL AND ELECTRICAL PROPERTIES OF SOL–GEL DERIVED SiO2 THICK FILM ON 4H–SiC

2010 ◽  
Vol 24 (23) ◽  
pp. 4521-4528
Author(s):  
KUAN YEW CHEONG ◽  
AZLAN AHMAD KURNIN
Keyword(s):  
Electrical Properties ◽  
Thick Film ◽  
Substrate Surface ◽  
Sol Gel ◽  
Film Deposition ◽  
Post Deposition Annealing ◽  
Structural And Electrical Properties ◽  
Coated Film ◽  
Post Deposition ◽  
Deposition Substrate

The effect of post-deposition annealing in forming gas on the structural and electrical properties of sol–gel derived SiO 2 thick film on n-type 4H–SiC has been systematically investigated. Tetraethylorthosilicate-based precursor with H 2 SO 4 as catalyst was prepared and prior to film deposition, substrate surface was treated by hexamethyldisilizane. The spin-coated film was annealed at 750–950°C for 30 min with an approximately 185-nm thick film. It was found that oxide annealed at the highest temperature revealed the densest film, lowest oxide defects, and lowest total interface trap density. As a result, this oxide had demonstrated the lowest leakage current density if compared with other oxides.

Post-deposition annealing influenced structural and electrical properties of Al/TiO2/Si gate capacitors

2013 ◽  
Vol 62 ◽  
pp. 68-80 ◽  
Author(s):  
M. Chandra Sekhar ◽  
P. Kondaiah ◽  
G. Mohan Rao ◽  
S.V. Jagadeesh Chandra ◽  
S. Uthanna
Keyword(s):  
Electrical Properties ◽  
Post Deposition Annealing ◽  
Structural And Electrical Properties ◽  
Post Deposition
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