Effect of nitrogen flow ratio on nano-mechanical properties of tantalum nitride thin film

2017 ◽  
Vol 719 ◽  
pp. 63-70 ◽  
Author(s):  
S.S. Firouzabadi ◽  
M. Naderi ◽  
K. Dehghani ◽  
F. Mahboubi
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Tantalum Nitride ◽  
Nitrogen Flow ◽  
Flow Ratio ◽  
Tantalum Nitride Thin Film

scholarly journals Effects of Nitrogen Flow Ratio on Structures, Bonding Characteristics, and Mechanical Properties of ZrNx Films

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 476 ◽  
Author(s):  
Yi-En Ke ◽  
Yung-I Chen
Keyword(s):  
Mechanical Properties ◽  
Photoelectron Spectroscopy ◽  
Structural Variation ◽  
Nitrogen Flow ◽  
Flow Ratio ◽  
X Ray ◽  
Direct Current Magnetron Sputtering ◽  
Nanoindentation Hardness ◽  
Bonding Characteristics ◽  
Dominant Phase

ZrNx (x = 0.67–1.38) films were fabricated through direct current magnetron sputtering by a varying nitrogen flow ratio [N2/(Ar + N2)] ranging from 0.4 to 1.0. The structural variation, bonding characteristics, and mechanical properties of the ZrNx films were investigated. The results indicated that the structure of the films prepared using a nitrogen flow ratio of 0.4 exhibited a crystalline cubic ZrN phase. The phase gradually changed to a mixture of crystalline ZrN and orthorhombic Zr3N4 followed by a Zr3N4 dominant phase as the N2 flow ratio increased up to >0.5 and >0.85, respectively. The bonding characteristics of the ZrNx films comprising Zr–N bonds of ZrN and Zr3N4 compounds were examined by X-ray photoelectron spectroscopy and were well correlated with the structural variation. With the formation of orthorhombic Zr3N4, the nanoindentation hardness and Young’s modulus levels of the ZrNx (x = 0.92–1.38) films exhibited insignificant variations ranging from 18.3 to 19.0 GPa and from 210 to 234 GPa, respectively.

scholarly journals Evaluation of Characteristics of a Tantalum-Nitride Thin Film Resistor on an AlN Submount.

2002 ◽  
Vol 68 (8) ◽  
pp. 1052-1056 ◽  
Author(s):  
Teruhisa AKASHI ◽  
Hideaki TAKEMORI ◽  
Tetsuya TOMOBE ◽  
Toshiaki KOIZUMI
Keyword(s):  
Thin Film ◽  
Tantalum Nitride ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Tantalum Nitride Thin Film

scholarly journals Structural and Mechanical Properties of AlCoCrNi High Entropy Nitride Films: Influence of Process Pressure

Coatings ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 10 ◽  
Author(s):  
Young Seok Kim ◽  
Hae Jin Park ◽  
Ki Seong Lim ◽  
Sung Hwan Hong ◽  
Ki Buem Kim
Keyword(s):  
Mechanical Properties ◽  
Nitrogen Flow ◽  
Flow Ratio ◽  
Si Substrate ◽  
Open Structure ◽  
High Entropy ◽  
Transmission Electron ◽  
Process Pressure ◽  
Direct Current Magnetron Sputtering ◽  
Sputtering System

In the present study, novel AlCoCrNi high entropy nitride (HEN) films were deposited on Si substrate by a reactive direct current magnetron sputtering system. In order to investigate the influence of sputtering parameters on the microstructure and mechanical properties of the film, nitrogen flow ratio (RN: 25–100%) and process pressure (1.33 × 10−1–1.33 Pa) were controlled, respectively. All the films were identified as an amorphous phase with composition of near equiatomic ratios, regardless of the conditions of nitrogen flow ratios and process pressures. However, the limited mechanical properties were found for the films deposited under different nitrogen flow ratios with retaining the process pressure of 1.33 Pa. To enhance the mechanical properties of the AlCoCrNi HEN film, process pressure was adjusted. From the transmission electron microscopy (TEM) observation, the structure of the film deposited at the process pressure of 1.33 Pa is identified as a porous and open structure with a number of density-deficient boundary and nano-scale voids. On the other hand, densified morphology of the film was observed at pressure of 1.33 × 10−1 Pa. As a result, the hardness, elastic modulus, and H/E were improved up to 16.8, 243 GPa, and 0.0692, respectively.

Sign in / Sign up

Export Citation Format

Share Document