Facile fabrication of thin metal oxide films on porous carbon for high density charge storage

2020 ◽  
Vol 562 ◽  
pp. 567-577 ◽  
Author(s):  
Bincy Lathakumary Vijayan ◽  
Izan Izwan Misnon ◽  
Gopinathan M. Anil Kumar ◽  
Keita Miyajima ◽  
Mogalahalli Venkatesh Reddy ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Porous Carbon ◽  
Oxide Films ◽  
High Density ◽  
Thin Metal ◽  
Charge Storage ◽  
Metal Oxide Films ◽  
Facile Fabrication

Photoluminescence of RE-doped thin metal oxide films

2005 ◽  
Vol 2 (1) ◽  
pp. 326-329 ◽  
Author(s):  
S. Lange ◽  
I. Sildos ◽  
V. Kiisk ◽  
J. Aarik ◽  
M. Kirm
Keyword(s):  
Metal Oxide ◽  
Oxide Films ◽  
Thin Metal ◽  
Metal Oxide Films

Stoichiometric determination of thin metal oxide films

1993 ◽  
Vol 75 (1-4) ◽  
pp. 371-374
Author(s):  
S. Fazinić ◽  
I. Bogdanović ◽  
E. Cereda ◽  
M. Jakšić ◽  
V. Valković
Keyword(s):  
Metal Oxide ◽  
Oxide Films ◽  
Thin Metal ◽  
Metal Oxide Films

Manipulation of interface electronic structure by thin metal oxide films

2013 ◽  
Vol 1537 ◽  
Author(s):  
Chenggong Wang ◽  
Irfan ◽  
Yongli Gao
Keyword(s):  
Electronic Structure ◽  
Metal Oxide ◽  
Work Function ◽  
Oxide Layer ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Hole Transport ◽  
Thin Metal ◽  
Transport Layer ◽  
Metal Oxide Films

AbstractWe have investigated the counter intuitive phenomenon of inserting a metal oxide layer to improve hole injection or extraction in organic semiconductor devices using ultraviolet photoemission, x-ray photoemission, and inverse photoemission spectroscopy (UPS, XPS and IPES). We observed that metal oxides, such as MoO3, substantially increase the work function when deposited on indium-tin-oxide (ITO). The increase lifts up the highest occupied molecular orbital (HOMO) of the hole transport layer, therefore reduces the energy barrier between the HOMO and the Fermi level of the anode. The uplift creates an interface band bending region that results in a drift electric field that encourages the collection of holes at the anode. The optimum thickness for the oxide layer is estimated to be 2 nm. We have also investigated the effects of ambient or O2 exposure of MoO3. We observed that while most of the electronic energy levels of the oxide remained largely intact, the work function reduction was significant. This opens a way for optimal energy level alignment by modifying the work function through exposure. Furthermore, we observed that the work function reduction by exposure could be reversed by proper annealing of the sample in vacuum. The investigations therefore point to manipulate the interface electronic structure and charge injection/extraction by thin metal oxide films.

Specific response of ultra-thin metal oxide films to gas

2009 ◽  
Vol 6 (12) ◽  
pp. 2753-2755 ◽  
Author(s):  
AruÌ„nas SÌŒetkus ◽  
Virginijus Bukauskas ◽  
AudruzÌŒis Mironas ◽  
Daiva Senulienė ◽  
Viktorija Strazdienė
Keyword(s):  
Metal Oxide ◽  
Oxide Films ◽  
Thin Metal ◽  
Specific Response ◽  
Metal Oxide Films

Photoelectrochemical investigations of thin metal-oxide films: TiO2, Al2O3, and HfO2 on the parent metals

1993 ◽  
Vol 38 (1) ◽  
pp. 15-27 ◽  
Author(s):  
Johanes P.H. Sukamto ◽  
Christopher S. McMillan ◽  
William Smyrl
Keyword(s):  
Metal Oxide ◽  
Oxide Films ◽  
Thin Metal ◽  
Metal Oxide Films

Reduction of Mercury Loss in Fluorescent Lamps Coated with Thin Metal-Oxide Films

2003 ◽  
Vol 150 (7) ◽  
pp. H147 ◽  
Author(s):  
V. D. Hildenbrand ◽  
C. J. M. Denissen ◽  
A. J. H. P. van der Pol ◽  
A. H. C. Hendriks ◽  
C. van der Marel ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Oxide Films ◽  
Thin Metal ◽  
Metal Oxide Films ◽  
Fluorescent Lamps

Luminescent materials based on thin metal oxide films doped with rare earth ions

2008 ◽  
Vol 50 (9) ◽  
pp. 1727-1730 ◽  
Author(s):  
P. Kanarjov ◽  
V. Reedo ◽  
I. Oja Acik ◽  
L. Matisen ◽  
A. Vorobjov ◽  
...  
Keyword(s):  
Rare Earth ◽  
Metal Oxide ◽  
Oxide Films ◽  
Rare Earth Ions ◽  
Thin Metal ◽  
Luminescent Materials ◽  
Metal Oxide Films
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