Effects of growth pause on the structural and optical properties of InGaAsN–InGaAsP quantum well

2004 ◽  
Vol 265 (1-2) ◽  
pp. 1-7 ◽  
Author(s):  
Jeng-Ya Yeh ◽  
Nelson Tansu ◽  
Luke J. Mawst
1996 ◽  
Vol 449 ◽  
Author(s):  
H. Amano ◽  
T. Takeuchi ◽  
S. Sota ◽  
H. Sakai ◽  
I. Akasaki

ABSTRACTStructural and optical properties of nitride based heterostructure and quantum well structure were investigated. Both AIGaN and GaInN ternary alloys are found to grow coherently on the underlying GaN layer. Compressive strain of GaInN is found to cause quantum confined Stark effect, thus affects the luminescence properties of nitride-based quantum wells.


2004 ◽  
Vol 38 (3) ◽  
pp. 340-343 ◽  
Author(s):  
I. P. Soshnikov ◽  
N. V. Kryzhanovskaya ◽  
N. N. Ledentsov ◽  
A. Yu. Egorov ◽  
V. V. Mamutin ◽  
...  

APL Materials ◽  
2020 ◽  
Vol 8 (5) ◽  
pp. 051112 ◽  
Author(s):  
M. Kneiß ◽  
P. Storm ◽  
A. Hassa ◽  
D. Splith ◽  
H. von Wenckstern ◽  
...  

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