Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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EXCITON AND BIEXCITON PHENOMENA IN ZINC SULPHIDE EPILAYERS

Journal of Nonlinear Optical Physics & Materials ◽

10.1142/s0218863596000441 ◽

1996 ◽

Vol 05 (04) ◽

pp. 621-629 ◽

Cited By ~ 2

Author(s):

J. VALENTA ◽

D. GUENNANI ◽

A. MANAR ◽

P. GILLIOT

Keyword(s):

Optical Gain ◽

Vapour Phase ◽

Zinc Sulphide ◽

Detailed Characterization ◽

Vapour Phase Epitaxy ◽

Nanosecond Lasers ◽

Metal Organic ◽

Organic Vapour ◽

Linear Optical Properties

The detailed characterization of metal organic vapour phase epitaxy grown ZnS layers on GaAs is the first step towards the study of their different non-linear optical properties performed with nanosecond lasers. Biexciton phenomena (with a binding energy of about 10 meV) are observed in photoluminescence-excitation and optical-gain spectra.

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Толстые слои alpha-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- на сапфировых подложках, полученные методом хлоридной эпитаксии

Физика и техника полупроводников ◽

10.21883/ftp.2019.06.47730.9033 ◽

2019 ◽

Vol 53 (6) ◽

pp. 789

Author(s):

А.И. Печников ◽

С.И. Степанов ◽

А.В. Чикиряка ◽

М.П. Щеглов ◽

М.А. Одноблюдов ◽

...

Keyword(s):

Single Phase ◽

Film Growth ◽

Vapour Phase ◽

Wide Bandgap ◽

Structural And Optical Properties ◽

Vapour Phase Epitaxy ◽

Record Value ◽

Epitaxial Film Growth ◽

Thick Layers

This paper reports on epitaxial film growth and characterization of α-Ga2O3, a novel wide bandgap semiconducting material. The films were deposited by halide vapour phase epitaxy on basal plane sapphire substrates. The films were from 0.5 μm to over 10 μm in thickness, the latter being the record value by now. Structural and optical properties of the specimens were studied. All specimens were structurally uniform, single phase, and had a corundum-like r3c structure similar to that of sapphire substrate. It was found that the full width at half maximum for the (0006) α-Ga2O3 reflection varies with layer thickness and approaches 240 arcsec for the thickest layer. Both thin and thick layers were transparent in the visible and UV spectral range up to the absorption edge at 5.2 eV.

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Optical characterization of pure ZnSe epilayers grown by metal organic vapour-phase epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/9/11/007 ◽

1994 ◽

Vol 9 (11) ◽

pp. 2073-2079 ◽

Cited By ~ 11

Author(s):

A Chergui ◽

J Valenta ◽

J L Loison ◽

M Robino ◽

I Pelant ◽

...

Keyword(s):

Optical Characterization ◽

Vapour Phase ◽

Vapour Phase Epitaxy ◽

Metal Organic ◽

Organic Vapour

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Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy

physica status solidi (c) ◽

10.1002/pssc.200565186 ◽

2006 ◽

Vol 3 (6) ◽

pp. 1687-1690 ◽

Cited By ~ 7

Author(s):

J. G. Lozano ◽

D. González ◽

A. M. Sánchez ◽

D. Araújo ◽

S. Ruffenach ◽

...

Keyword(s):

Quantum Dots ◽

Structural Characterization ◽

Vapour Phase ◽

Vapour Phase Epitaxy ◽

Metalorganic Vapour Phase Epitaxy

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Electrical characterization of n-InP grown by metal-organic vapour-phase epitaxy

Canadian Journal of Physics ◽

10.1139/p87-129 ◽

1987 ◽

Vol 65 (8) ◽

pp. 846-849

Author(s):

M. Benzaquen ◽

D. Walsh ◽

K. Mazaruk ◽

P. Weissfloch ◽

N. Puetz ◽

...

Keyword(s):

Electrical Transport ◽

Electrical Characterization ◽

Vapour Phase ◽

Donor Center ◽

Vapour Phase Epitaxy ◽

Deep Donor ◽

Metal Organic ◽

Organic Vapour ◽

Electronic Concentration

At room-temperature, the Hall mobility observed in epitaxic n-InP samples grown by metal-organic vapour-phase epitaxy is often lower than predicted, with a corresponding rise in the electronic concentration. These effects are attributed to the presence of a residual deep donor center that both acts as a strong scatterer and provides the additional electronic excitation observed at high temperature as it ionizes. A binding energy of 215 meV is consistent with both electrical-transport measurements and the observed photoluminescence.

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