A comparative study of the growth mechanism of InAs/GaAs and GaP/GaAs heterostructures and strained layered superlattices by atomic layer epitaxy

2005 ◽  
Vol 276 (3-4) ◽  
pp. 374-380 ◽  
Author(s):  
M. Ozeki ◽  
T. Haraguchi ◽  
T. Takeuchi ◽  
K. Maeda
Keyword(s):  
Comparative Study ◽  
Growth Mechanism ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Novel approach for Growth Mechanism of Atomic Layer Epitaxy of GaAs and AlAs

2019 ◽  
Author(s):  
N. Ohtsuka ◽  
M. Oda ◽  
T. Eshita ◽  
I. Tanaka ◽  
C. Itoh
Keyword(s):  
Growth Mechanism ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Novel Approach

Atomic layer epitaxy of AlAs: Growth mechanism

1994 ◽  
Vol 82-83 ◽  
pp. 233-238 ◽  
Author(s):  
M. Ozeki ◽  
N. Ohtsuka
Keyword(s):  
Growth Mechanism ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGF10
Author(s):  
Masahiro Kawano ◽  
Ryo Minematsu ◽  
Tomohiro Haraguchi ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
N Distribution

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy
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