Growth Mechanism in Atomic Layer Epitaxy (II). A Model of the Growth Process of CdTe on CdTe (111) Substrates

1986 ◽  
Vol 21 (8) ◽  
pp. 969-974 ◽  
Author(s):  
M. A. Herman ◽  
O. Jylhä ◽  
M. Pessa
1991 ◽  
Vol 30 (Part 2, No. 11A) ◽  
pp. L1847-L1849 ◽  
Author(s):  
Akinori Koukitu ◽  
Hitoshi Ikeda ◽  
Hiroshi Yasutake ◽  
Hisashi Seki

2019 ◽  
Author(s):  
N. Ohtsuka ◽  
M. Oda ◽  
T. Eshita ◽  
I. Tanaka ◽  
C. Itoh

1997 ◽  
Vol 56 (8) ◽  
pp. 4878-4886 ◽  
Author(s):  
Kuang-Hsin Huang ◽  
Tsai-Shian Ku ◽  
Deng-Sung Lin

2021 ◽  
Vol 9 (12) ◽  
pp. 4307-4315
Author(s):  
Tai Nguyen ◽  
Nathalie Valle ◽  
Jérôme Guillot ◽  
Jérôme Bour ◽  
Noureddine Adjeroud ◽  
...  

The growth process of zinc oxide (ZnO) thin films by atomic layer deposition (ALD) accompanied by the presence of oxygen gas pulsing is investigated by means of the isotopic tracking of oxygen 18O from the water precursor and oxygen 16O from the gas.


1994 ◽  
Vol 82-83 ◽  
pp. 233-238 ◽  
Author(s):  
M. Ozeki ◽  
N. Ohtsuka

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