A bottom–up multiscale view of point-defect aggregation in silicon

2007 ◽  
Vol 303 (1) ◽  
pp. 5-11 ◽  
Author(s):  
Talid Sinno
Keyword(s):  
Point Defect ◽  
Bottom Up ◽  
Defect Aggregation

An Atomically Accurate Model for Point Defect Aggregation in Silicon

2019 ◽  
Vol 2 (2) ◽  
pp. 77-88 ◽  
Author(s):  
Talid Sinno ◽  
Walter Haeckl ◽  
Wilfried von Ammon
Keyword(s):  
Point Defect ◽  
Accurate Model ◽  
Defect Aggregation

Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals

1996 ◽  
Vol 36 (1-3) ◽  
pp. 33-41 ◽  
Author(s):  
W.v. Ammon ◽  
P. Dreier ◽  
W. Hensel ◽  
U. Lambert ◽  
L. Köster
Keyword(s):  
Point Defect ◽  
Single Crystals ◽  
Defect Aggregation

Detection of a point defect in a silicon single crystal by high-resolution TEM

1995 ◽  
Vol 53 ◽  
pp. 466-467
Author(s):  
M. Awaji
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Point Defect ◽  
Point Defects ◽  
Noise Level ◽  
Dark Field ◽  
Silicon Single Crystal ◽  
High Resolution Image ◽  
Dark Field Imaging ◽  
Field Imaging

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.

Sign in / Sign up

Export Citation Format

Share Document