Numerical Modeling of the Point Defect Aggregation during the Czochralski Silicon Crystal Growth

1992 ◽  
Vol 139 (2) ◽  
pp. 604-616 ◽  
Author(s):  
W. Wijaranakula
Keyword(s):  
Numerical Modeling ◽  
Crystal Growth ◽  
Point Defect ◽  
Silicon Crystal ◽  
Czochralski Silicon ◽  
Defect Aggregation

Numerical Simulation of Point Defect Distributions in a Growing Czochralski Silicon Crystal in Response to an Abrupt Change in the Growth Conditions

1995 ◽  
Vol 378 ◽  
Author(s):  
W. Wijaranakula ◽  
Q. S. Zhang ◽  
K. Takano ◽  
H. Yamagishi
Keyword(s):  
Numerical Simulation ◽  
Growth Rate ◽  
Crystal Growth ◽  
Point Defect ◽  
Flow Pattern ◽  
Abrupt Change ◽  
Silicon Crystal ◽  
Crystal Growth Rate ◽  
Rate Theory ◽  
Czochralski Silicon

AbstractNumerical simulation of point defect distributions in a growing Czochralski silicon crystal with an abrupt change in the crystal growth rate from 1.0 to 0.4 mm/min was performed. The result was fitted to the experimental data for the flow pattern defects obtained from a crystal grown under simulated conditions. From the simulation result, it was observed that the axial temperature distribution shifts slightly upwards as a result of the growth rate reduction. Based upon the argument that the flow pattern defects are of vacancy-type, it is proposed that the generation rate of the flow pattern defects during crystal growth can be described by the classical nucleation rate theory proposed by Becker [Proc.Phys.Soc., 52, 71(1940)]. In addition, it is suggested that the vacancy concentration in the flow pattern defects depends upon the reaction time between the silicon interstitials and the flow pattern defects and thus the crystal growth rate.

Measurement of temperature gradient in Czochralski silicon crystal growth

2001 ◽  
Vol 229 (1-4) ◽  
pp. 6-10 ◽  
Author(s):  
Xinming Huang ◽  
Toshinori Taishi ◽  
Tiefeng Wang ◽  
Keigo Hoshikawa
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Silicon Crystal ◽  
Czochralski Silicon

Investigation of nitrogen behaviors during Czochralski silicon crystal growth

2011 ◽  
Vol 318 (1) ◽  
pp. 178-182 ◽  
Author(s):  
Xuegong Yu ◽  
Deren Yang ◽  
Keigo Hoshikawa
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Czochralski Silicon
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