The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer

High density and vertically well-aligned ZnO nanoneedle arrays were fabricated on the ZnO thin film deposited on silicon substrates. The ZnO buffer layer and nanoneedles were synthesized by metal organic chemical vapor deposition using diethylzinc and oxygen gas. The ZnO buffer film was grown at 250 °C and the growth temperature of nanoneedles was in the range of 480–500 °C. As-grown ZnO nanoneedles showed single crystalline structure of ZnO (002). The crystalline properties of three samples (A: as-deposited ZnO buffer layer, B: annealed buffer film, C: ZnO nanoneedles) were compared using XRD and Raman spectroscopy. The synthesized ZnO nanoneedles (sample C) showed highest crystalline quality among three samples. The field emission properties of ZnO nanoneedles were investigated, which showed low turn on field of 4.8 V μm−1 and high field enhancement factor of 3.2 × 103.

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Epitaxial CoSi2 formation using an oxynitride buffer layer

Journal of Materials Research ◽

10.1557/jmr.2009.0320 ◽

2009 ◽

Vol 24 (8) ◽

pp. 2705-2710 ◽

Cited By ~ 1

Author(s):

Jaesang Lee ◽

Keunwoo Lee ◽

Dongock Kim ◽

Taeyong Park ◽

Honggyu Kim ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Buffer Layer ◽

Vapor Deposition ◽

Growth Process ◽

Film Growth ◽

Chemical Vapor ◽

Ex Situ ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

We investigated the epitaxial growth of CoSi2 (100) on an Si (100) substrate using a modified oxide mediated epitaxy (OME) method to overcome the disadvantages of the OME method. These disadvantages are sensitivity of Co films to contamination by oxygen and the need for reiterating the film growth process to obtain thicker films. To solve these problems, nitrogen atoms were incorporated into chemically grown oxide (SiOx) by NH3 plasma treatment prior to the deposition of a Co film on the oxynitride buffer layer using the metal organic chemical vapor deposition (MOCVD) method. Subsequently, ex situ rapid thermal annealing was performed to grow Co-silicide at a temperature between 400 °C and 700 °C for 1 min. The results show that the diffusion of Co was effectively controlled by the oxynitride buffer layer without the formation of additional SiOx in between Co and Si. Our findings indicate that by using an oxynitride buffer layer, CoSi2 films can be grown epitaxially despite the fact that the initial Co film was exposed to oxygen.

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GaN Epitaxial Layer Grown with Conductive AlxGa1−xN Buffer Layer on SiC Substrate Using Metal Organic Chemical Vapor Deposition

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2016.12256 ◽

2016 ◽

Vol 16 (5) ◽

pp. 4914-4918

Author(s):

Byeongchan So ◽

Kyungbae Lee ◽

Kyungjae Lee ◽

Cheon Heo ◽

Jaedo Pyeon ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Buffer Layer ◽

Epitaxial Layer ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Polarity Control of GaN Films Grown by Metal Organic Chemical Vapor Deposition on (0001) Sapphire Substrates

MRS Proceedings ◽

10.1557/proc-831-e3.20 ◽

2004 ◽

Vol 831 ◽

Cited By ~ 1

Author(s):

Seiji Mita ◽

Ramon Collazo ◽

Raoul Schlesser ◽

Zlatko Sitar

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Buffer Layers ◽

Organic Chemical ◽

Sapphire Substrates ◽

Mixed Polarity ◽

Metal Organic ◽

Aln Buffer ◽

Organic Chemical Vapor Deposition

ABSTRACTThe polarity control of GaN films grown on c-plane sapphire substrates by low pressure metal organic chemical vapor deposition (MOCVD) was achieved by using N2 as a diluent and transport gas. The type of polarity was governed by the substrate treatment prior to the GaN growth. N-face (-c) GaN films were only obtained by pre-nitridation of the sapphire substrate after a H2 anneal, while Ga-face (+c) GaN films were grown directly on the substrates or on properly annealed AlN buffer layers. In addition, GaN films on improperly annealed AlN buffer layers, that is, under- or over-annealed buffer layers, yielded films with mixed polarity. Smooth N-face GaN films with 2.5 nm RMS roughness, as determined by atomic force microscopy (AFM), were obtained with shorter nitridation times (less than 2 min). Wet chemical etching in an aqueous solution of potassium hydroxide (KOH) was used to determine the polarity type.

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