Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells

2013 ◽  
Vol 378 ◽  
pp. 259-262 ◽  
Author(s):  
Tooru Tanaka ◽  
Yasuhiro Nagao ◽  
Tomohiro Mochinaga ◽  
Katsuhiko Saito ◽  
Qixin Guo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Intermediate Band ◽  
Molecular Beam Epitaxial ◽  
Intermediate Band Solar Cells ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells

2019 ◽  
Vol 512 ◽  
pp. 159-163 ◽  
Author(s):  
C. Chevuntulak ◽  
T. Rakpaises ◽  
N. Sridumrongsak ◽  
S. Thainoi ◽  
S. Kiravittaya ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Heterojunction Solar Cells ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of intermediate-band materials based on GaAs:N δ-doped superlattices

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KA07 ◽  
Author(s):  
Tomoya Suzuki ◽  
Kazuki Osada ◽  
Shuhei Yagi ◽  
Shunya Naitoh ◽  
Yasushi Shoji ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Intermediate Band ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

scholarly journals Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 344
Author(s):  
Yasushi Shoji ◽  
Ryo Tamaki ◽  
Yoshitaka Okada
Keyword(s):  
Solar Cells ◽  
Molecular Beam ◽  
Optical Excitation ◽  
Material System ◽  
Intermediate Band ◽  
Temperature Characteristics ◽  
Quantum Nanostructures ◽  
Band Engineering ◽  
Intermediate Band Solar Cells ◽  
Carrier Extraction

From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs). In IBSCs, current generation via two-step optical excitations through the intermediate band is the key to the operating principle. This mechanism requires the formation of a strong quantum confinement structure. Therefore, we focused on the material system with GaSb quantum nanostructures embedded in AlGaAs layers. However, studies involving crystal growth of GaSb quantum nanostructures on AlGaAs layers have rarely been reported. In our work, we fabricated GaSb quantum dots (QDs) and quantum rings (QRs) on AlGaAs layers via molecular-beam epitaxy. Using the Stranski–Krastanov growth mode, we demonstrated that lens-shaped GaSb QDs can be fabricated on AlGaAs layers. In addition, atomic force microscopy measurements revealed that GaSb QDs could be changed to QRs under irradiation with an As molecular beam even when they were deposited onto AlGaAs layers. We also investigated the suitability of GaSb/AlGaAs QDSCs and QRSCs for use in IBSCs by evaluating the temperature characteristics of their external quantum efficiency. For the GaSb/AlGaAs material system, the QDSC was found to have slightly better two-step optical excitation temperature characteristics than the QRSC.

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of low‐resistivity ZnSe films

1979 ◽  
Vol 35 (2) ◽  
pp. 97-98 ◽  
Author(s):  
Takafumi Yao ◽  
Yunosuke Makita ◽  
Shigeru Maekawa
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Low Resistivity ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm

2000 ◽  
Vol 208 (1-4) ◽  
pp. 93-99 ◽  
Author(s):  
Y Nakata ◽  
K Mukai ◽  
M Sugawara ◽  
K Ohtsubo ◽  
H Ishikawa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Light Emission ◽  
Molecular Beam Epitaxial ◽  
Self Assembled ◽  
Molecular Beam Epitaxial Growth
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