The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate

2016 ◽  
Vol 442 ◽  
pp. 89-94 ◽  
Author(s):  
Lin Shang ◽  
Guangmei Zhai ◽  
Fuhong Mei ◽  
Wei Jia ◽  
Chunyan Yu ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Sapphire Substrate ◽  
Structural Evolution ◽  
Crystal Quality ◽  
Nucleation Layer ◽  
Patterned Sapphire Substrate ◽  
Step Process ◽  
Bulk Gan

The evolution of a GaN/sapphire interface with different nucleation layer thickness during two-step growth and its influence on the bulk GaN crystal quality

RSC Advances ◽  
2015 ◽  
Vol 5 (63) ◽  
pp. 51201-51207 ◽  
Author(s):  
Lin Shang ◽  
Taiping Lu ◽  
Guangmei Zhai ◽  
Zhigang Jia ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Chemical Vapor ◽  
Crystal Quality ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Bulk Gan ◽  
Metal Organic ◽  
Step Growth ◽  
Gan Crystal

The role of the nucleation layer thickness on the GaN crystal quality grown by metal organic chemical vapor deposition is explored.

Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate

CrystEngComm ◽  
2019 ◽  
Vol 21 (34) ◽  
pp. 5124-5128 ◽  
Author(s):  
Shen Yan ◽  
Junhui Die ◽  
Caiwei Wang ◽  
Xiaotao Hu ◽  
Ziguang Ma ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Crystal Quality ◽  
High Quality ◽  
Patterned Sapphire Substrate ◽  
Direct Growth

In this work, high-quality a-plane GaN was obtained by direct growth on a stripe-patterned sapphire substrate.

Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy

2010 ◽  
Vol 19 (11) ◽  
pp. 116801 ◽  
Author(s):  
Fan Ren ◽  
Zhi-Biao Hao ◽  
Jian-Nan Hu ◽  
Chen Zhang ◽  
Yi Luo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Crystal Quality ◽  
Nucleation Layer

Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE

2001 ◽  
Vol 222 (1-2) ◽  
pp. 110-117 ◽  
Author(s):  
H.Z Xu ◽  
K Takahashi ◽  
C.X Wang ◽  
Z.G Wang ◽  
Y Okada ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Sapphire Substrate ◽  
Crystal Quality

Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate

2013 ◽  
Vol 25 (1) ◽  
pp. 267-272 ◽  
Author(s):  
Dechao Yang ◽  
Hongwei Liang ◽  
Yu Qiu ◽  
Rensheng Shen ◽  
Yang Liu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Patterned Sapphire Substrate

Improvement of crystal quality of AlN grown on sapphire substrate by MOCVD

2010 ◽  
Vol 45 (7) ◽  
pp. 703-706 ◽  
Author(s):  
Mu-Jen Lai ◽  
Liann-Be Chang ◽  
Tzu-Tao Yuan ◽  
Ray-Ming Lin
Keyword(s):  
Sapphire Substrate ◽  
Crystal Quality

Influence of stacking faults on the quality of GaN films grown on sapphire substrate using a sputtered AlN nucleation layer

2017 ◽  
Vol 89 ◽  
pp. 193-196 ◽  
Author(s):  
Zhibin Chen ◽  
Jincheng Zhang ◽  
Shengrui Xu ◽  
Junshuai Xue ◽  
Teng Jiang ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Stacking Faults ◽  
Nucleation Layer

Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate

2011 ◽  
Vol 28 (6) ◽  
pp. 068502 ◽  
Author(s):  
Meng Wu ◽  
Yi-Ping Zeng ◽  
Jun-Xi Wang ◽  
Qiang Hu
Keyword(s):  
Sapphire Substrate ◽  
Nucleation Layer ◽  
Patterned Sapphire Substrate
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