Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate

CrystEngComm ◽  
2019 ◽  
Vol 21 (34) ◽  
pp. 5124-5128 ◽  
Author(s):  
Shen Yan ◽  
Junhui Die ◽  
Caiwei Wang ◽  
Xiaotao Hu ◽  
Ziguang Ma ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Crystal Quality ◽  
High Quality ◽  
Patterned Sapphire Substrate ◽  
Direct Growth

In this work, high-quality a-plane GaN was obtained by direct growth on a stripe-patterned sapphire substrate.

Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE

2001 ◽  
Vol 222 (1-2) ◽  
pp. 110-117 ◽  
Author(s):  
H.Z Xu ◽  
K Takahashi ◽  
C.X Wang ◽  
Z.G Wang ◽  
Y Okada ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Sapphire Substrate ◽  
Crystal Quality

Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate

2013 ◽  
Vol 25 (1) ◽  
pp. 267-272 ◽  
Author(s):  
Dechao Yang ◽  
Hongwei Liang ◽  
Yu Qiu ◽  
Rensheng Shen ◽  
Yang Liu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Patterned Sapphire Substrate

Improvement of crystal quality of AlN grown on sapphire substrate by MOCVD

2010 ◽  
Vol 45 (7) ◽  
pp. 703-706 ◽  
Author(s):  
Mu-Jen Lai ◽  
Liann-Be Chang ◽  
Tzu-Tao Yuan ◽  
Ray-Ming Lin
Keyword(s):  
Sapphire Substrate ◽  
Crystal Quality

scholarly journals Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy

2020 ◽  
Vol 10 (2) ◽  
pp. 639
Author(s):  
Minghui Gu ◽  
Chen Li ◽  
Yuanfeng Ding ◽  
Kedong Zhang ◽  
Shunji Xia ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Three Dimensional ◽  
High Mobility ◽  
Two Dimensional ◽  
Large Area ◽  
High Quality ◽  
Direct Growth

Monolayer antimony (antimonene) has been reported for its excellent properties, such as tuneable band gap, stability in the air, and high mobility. However, growing high quality, especially large-area antimonene, remains challenging. In this study, we report the direct growth of antimonene on c-plane sapphire substrate while using molecular beam epitaxy (MBE). We explore the effect of growth temperature on antimonene formation and present a growth phase diagram of antimony. The effect of antimony sources (Sb2 or Sb4) and a competing mechanism between the two-dimensional (2D) and three-dimensional (3D) growth processes and the effects of adsorption and cracking of the source molecules are also discussed. This work offers a new method for growing antimonene and it provides ideas for promoting van der Waals epitaxy.

High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD

2019 ◽  
Vol 114 (4) ◽  
pp. 042101 ◽  
Author(s):  
Hanling Long ◽  
Jiangnan Dai ◽  
Yi Zhang ◽  
Shuai Wang ◽  
Bo Tan ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
High Quality ◽  
Patterned Sapphire Substrate

High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal–organic vapor phase epitaxy

CrystEngComm ◽  
2012 ◽  
Vol 14 (14) ◽  
pp. 4728 ◽  
Author(s):  
Hao Long ◽  
Yang Wei ◽  
Tongjun Yu ◽  
Zhe Wang ◽  
Chuanyu Jia ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Patterned Sapphire Substrate ◽  
Organic Vapor ◽  
Metal Organic
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