Multi-scale modeling of gas-phase reactions in metal-organic chemical vapor deposition growth of WSe2

AbstractQuantum dots (QDs) have been shown to improve the efficiency and optical properties of opto- electronic devices compared to two dimensional quantum wells in the active region. The formation of self-assembled GaN nanostructures on aluminum nitride (AlN) grown on sapphire substrates by Metal Organic Chemical Vapor deposition (MOCVD) was explored. This paper reports on the effect ofin-situactivation in nitrogen atmosphere on MOCVD grown GaN nanostructures. The effect of introducing manganese in these nanostructures was also studied. Optically active nanostructures were successfully obtained. A blue shift is observed in the photoluminescence data with a decrease in nanostructure size.

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Controlling nucleation of monolayer WSe 2 during metal-organic chemical vapor deposition growth

2D Materials ◽

10.1088/2053-1583/3/2/025015 ◽

2016 ◽

Vol 3 (2) ◽

pp. 025015 ◽

Cited By ~ 23

Author(s):

Sarah M Eichfeld ◽

Víctor Oliveros Colon ◽

Yifan Nie ◽

Kyeongjae Cho ◽

Joshua A Robinson

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Chemical Vapor Deposition Growth ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Fourier analysis applied on in situ laser reflectometry during III-nitride metal organic chemical vapor deposition growth

Journal of Applied Physics ◽

10.1063/1.2722247 ◽

2007 ◽

Vol 101 (9) ◽

pp. 093501 ◽

Cited By ~ 3

Author(s):

C. Simbrunner ◽

H. Sitter ◽

A. Bonanni

Keyword(s):

Chemical Vapor Deposition ◽

Fourier Analysis ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Chemical Vapor Deposition Growth ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Laser Reflectometry

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Manipulation of Room Temperature Ferromagnetic behavior of GaMnN Epilayers

MRS Proceedings ◽

10.1557/proc-1198-e07-13 ◽

2009 ◽

Vol 1198 ◽

Author(s):

Neeraj Nepal ◽

M. Oliver Luen ◽

Pavel Frajtag ◽

John Zavada ◽

Salah M. Bedair ◽

...

Keyword(s):

Room Temperature ◽

Hole Concentration ◽

Chemical Vapor ◽

Multilayer Structures ◽

Organic Chemical ◽

Ferromagnetic Behavior ◽

Chemical Vapor Deposition Growth ◽

Metal Organic ◽

P Type ◽

Organic Chemical Vapor Deposition

AbstractWe report on metal organic chemical vapor deposition growth of GaMnN/p-GaN/n-GaN multilayer structures and manipulation of room temperature (RT) ferromagnetism (FM) in a GaMnN layer. The GaMnN layer was grown on top of a n-GaN substrate and found to be almost always paramagnetic. However, when grown on a p-type GaN layer, a strong saturation magnetization (Ms) was observed. Ms was almost doubled after annealing demonstrating that the FM observed in GaMnN film is carrier-mediated. To control the hole concentration of the p-GaN layer by depletion, GaMnN/p-GaN/n-GaN multilayer structures of different p-GaN thickness (Xp) were grown on sapphire substrates. We have demonstrated that the FM depends on the Xp and the applied bias to the GaN p-n junction. The FM of these multilayer is independent on the top GaMnN layer thickness (tGaMnN) for tGaMnN >200 nm and decreases for tGaMnN < 200 nm. Thus the room temperature FM of GaMnN i-p-n structure can also be controlled by changing Xp and tGaMnN in the GaMnN i-p-n structures.

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